IS61NW6432 データシートの表示（PDF） - Integrated Silicon Solution

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IS61NW6432

64K x 32 SYNCHRONOUS STATIC RAM WITH NO-WAIT STATE BUS FEATURE

Integrated Silicon Solution 

IS61NW6432

INTERLEAVED BURST ADDRESS TABLE (MODE = VCCQ or No Connect)

External Address

A1 A0

00

01

10

11

1st Burst Address

A1 A0

01

00

11

10

2nd Burst Address

A1 A0

10

11

00

01

3rd Burst Address

A1 A0

11

10

01

00

LINEAR BURST ADDRESS TABLE (MODE = GNDQ)

0,0

A1', A0' = 1,1

0,1

1,0

ABSOLUTE MAXIMUM RATINGS(1)

Symbol Parameter

Value

Unit

TBIAS

TSTG

PD

Temperature Under Bias

Storage Temperature

Power Dissipation

–10 to +85

°C

–55 to +150

°C

1.8

W

IOUT

Output Current (per I/O)

100

mA

VIN, VOUT Voltage Relative to GND for I/O Pins

–0.5 to VCCQ + 0.3 V

VIN

Voltage Relative to GND for

for Address and Control Inputs

–0.5 to 5.5

V

Notes:

1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause

permanent damage to the device. This is a stress rating only and functional operation

of the device at these or any other conditions above those indicated in the operational

sections of this specification is not implied. Exposure to absolute maximum rating

conditions for extended periods may affect reliability.

2. This device contains circuity to protect the inputs against damage due to high static

voltages or electric fields; however, precautions may be taken to avoid application of

any voltage higher than maximum rated voltages to this high-impedance circuit.

3. This device contains circuitry that will ensure the output devices are in High-Z at power

up.

8

Integrated Silicon Solution, Inc.

ADVANCE INFORMATION SR050-0B

07/15/98

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