MTD2955V データシートの表示（PDF） - ON Semiconductor
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MTD2955V Datasheet PDF : 10 Pages
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MTD2955V
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
(VGS = 0 Vdc, ID = 0.25 mAdc)
Temperature Coefficient (Positive)
(Cpk ≥ 2.0) (Note 5)
Zero Gate Voltage Drain Current
(VDS = 60 Vdc, VGS = 0 Vdc)
(VDS = 60 Vdc, VGS = 0 Vdc, TJ = 150°C)
Gate−Body Leakage Current (VGS = ± 20 Vdc, VDS = 0 Vdc)
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage
(VDS = VGS, ID = 250 mAdc)
Threshold Temperature Coefficient (Negative)
(Cpk ≥ 2.0) (Note 5)
Static Drain−to−Source On−Resistance
(VGS = 10 Vdc, ID = 6.0 Adc)
(Cpk ≥ 1.5) (Note 5)
Drain−to−Source On−Voltage
(VGS = 10 Vdc, ID = 12 Adc)
(VGS = 10 Vdc, ID = 6.0 Adc, TJ = 150°C)
Forward Transconductance (VDS = 10 Vdc, ID = 6.0 Adc)
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
(VDS = 25 Vdc, VGS = 0 Vdc,
f = 1.0 MHz)
SWITCHING CHARACTERISTICS (Note 4)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
(VDD = 30 Vdc, ID = 12 Adc,
VGS = 10 Vdc,
RG = 9.1 W)
Gate Charge
(VDS = 48 Vdc, ID = 12 Adc,
VGS = 10 Vdc)
SOURCE−DRAIN DIODE CHARACTERISTICS
Forward On−Voltage (Note 3)
(IS = 12 Adc, VGS = 0 Vdc)
(IS = 12 Adc, VGS = 0 Vdc, TJ = 150°C)
Symbol
V(BR)DSS
IDSS
IGSS
VGS(th)
RDS(on)
VDS(on)
gFS
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
QT
Q1
Q2
Q3
VSD
Reverse Recovery Time
trr
Reverse Recovery Stored
Charge
(IS = 12 Adc, VGS = 0 Vdc,
dIS/dt = 100 A/ms)
ta
tb
QRR
INTERNAL PACKAGE INDUCTANCE
Internal Drain Inductance
LD
(Measured from contact screw on tab to center of die)
(Measured from the drain lead 0.25″ from package to center of die)
Internal Source Inductance
LS
(Measured from the source lead 0.25″ from package to source bond pad)
3. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%.
4. Switching characteristics are independent of operating junction temperature.
5. Reflects typical values.
Max limit − Typ
Cpk =
3 x SIGMA
Min
Typ
Max
Unit
60
−
−
58
Vdc
−
−
mV/°C
mAdc
−
−
10
−
−
100
−
−
100
nAdc
Vdc
2.0
2.8
4.0
−
5.0
−
mV/°C
W
−
0.185 0.230
Vdc
−
−
2.9
−
−
2.5
3.0
5.0
−
mhos
−
550
770
pF
−
200
280
−
50
100
−
15
30
ns
−
50
100
−
24
50
−
39
80
−
19
30
nC
−
4.0
−
−
9.0
−
−
7.0
−
Vdc
−
1.8
3.0
−
1.5
−
−
115
−
ns
−
90
−
−
25
−
−
0.53
−
mC
nH
−
3.5
−
−
4.5
−
nH
−
7.5
−
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