MTD20N06HD データシートの表示（PDF） - ON Semiconductor
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MTD20N06HD Datasheet PDF : 11 Pages
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MTD20N06HD
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Characteristic
Symbol
Min
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
(VGS = 0 Vdc, ID = 250 μAdc)
Temperature Coefficient (Positive)
(Cpk ≥ 2.0) (Note 3) V(BR)DSS
60
−
Zero Gate Voltage Drain Current
(VDS = 60 Vdc, VGS = 0 Vdc)
(VDS = 60 Vdc, VGS = 0 Vdc, TJ = 125°C)
Gate−Body Leakage Current
(VGS = ± 20 Vdc, VDS = 0 Vdc)
ON CHARACTERISTICS (Note 1)
Gate Threshold Voltage
(VDS = VGS, ID = 250 μAdc)
Threshold Temperature Coefficient (Negative)
IDSS
−
−
IGSS
−
(Cpk ≥ 2.0) (Note 3)
VGS(th)
2.0
−
Static Drain−to−Source On−Resistance
(VGS = 10 Vdc, ID = 10 Adc)
(Cpk ≥ 2.0) (Note 3)
RDS(on)
−
Drain−to−Source On−Voltage (VGS = 10 Vdc)
(ID = 20 Adc)
(ID = 10 Adc, TJ = 125°C)
VDS(on)
−
−
Forward Transconductance
(VDS = 4.0 Vdc, ID = 10 Adc)
gFS
5.0
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Transfer Capacitance
(VDS = 25 Vdc, VGS = 0 Vdc,
f = 1.0 MHz)
Ciss
−
Coss
−
Crss
−
SWITCHING CHARACTERISTICS (Note 2)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
(VDD = 30 Vdc, ID = 20 Adc,
VGS = 10 Vdc,
RG = 9.1 Ω)
td(on)
−
tr
−
td(off)
−
tf
−
Gate Charge
(See Figure 7)
(VDS = 48 Vdc, ID = 20 Adc,
VGS = 10 Vdc)
QT
−
Q1
−
Q2
−
Q3
−
SOURCE−DRAIN DIODE CHARACTERISTICS
Forward On−Voltage
(Cpk ≥ 8.0) (Note 3)
(IS = 20 Adc, VGS = 0 Vdc)
(IS = 20 Adc, VGS = 0 Vdc,
TJ = 125°C)
VSD
−
−
Reverse Recovery Time
(See Figure 14)
(IS = 20 Adc, VGS = 0 Vdc,
dIS/dt = 100 A/μs)
trr
−
ta
−
tb
−
Reverse Recovery Stored Charge
INTERNAL PACKAGE INDUCTANCE
QRR
−
Internal Drain Inductance
(Measured from the drain lead 0.25″ from package to center of die)
LD
−
Internal Source Inductance
LS
(Measured from the source lead 0.25″ from package to source bond pad)
−
1. Pulse Test: Pulse Width ≤ 300 μs, Duty Cycle ≤ 2%.
2. Switching characteristics are independent of operating junction temperature.
3. Reflects typical values. Cpk = Absolute Value of Spec (Spec−AVG/3.516 μA).
Typ
Max
Unit
Vdc
−
−
54
−
mV/°C
μAdc
−
10
−
100
nAdc
−
100
−
7.0
0.035
−
−
6.0
4.0
−
0.045
1.2
1.1
−
Vdc
mV/°C
Ohm
Vdc
mhos
607
840
pF
218
290
55
110
9.2
18
ns
61.2
122
19
38
36
72
17
24
nC
3.4
−
7.75
−
7.46
−
Vdc
0.95
1.0
0.88
−
35.7
−
ns
24
−
11.7
−
0.055
−
μC
nH
4.5
−
nH
7.5
−
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