MTP33N10E データシートの表示（PDF） - Motorola => Freescale
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MTP33N10E Datasheet PDF : 8 Pages
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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
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by MTP33N10E/D
™ Designer's Data Sheet
TMOS E-FET.™
Power Field Effect Transistor
N–Channel Enhancement–Mode Silicon Gate
This advanced TMOS E–FET is designed to withstand high
energy in the avalanche and commutation modes. The new energy
efficient design also offers a drain–to–source diode with a fast
recovery time. Designed for low voltage, high speed switching
applications in power supplies, converters and PWM motor
controls, these devices are particularly well suited for bridge circuits
where diode speed and commutating safe operating areas are
critical and offer additional safety margin against unexpected
voltage transients.
• Avalanche Energy Specified
• Source–to–Drain Diode Recovery Time Comparable to a
Discrete Fast Recovery Diode
• Diode is Characterized for Use in Bridge Circuits
• IDSS and VDS(on) Specified at Elevated Temperature
®
D
MTP33N10E
Motorola Preferred Device
TMOS POWER FET
33 AMPERES
100 VOLTS
RDS(on) = 0.06 OHM
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating
G
CASE 221A–06, Style 5
TO–220AB
S
Symbol
Value
Unit
Drain–Source Voltage
Drain–Gate Voltage (RGS = 1.0 MΩ)
Gate–Source — Continuous
— Non–Repetitive (tp ≤ 10 ms)
VDSS
VDGR
VGS
VGSM
100
Vdc
100
Vdc
± 20
Vdc
± 40
Vpk
Drain Voltage — Continuous
— Continuous @ 100°C
— Single Pulse (tp ≤ 10 µs)
Total Power Dissipation
Derate above 25°C
ID
33
Adc
ID
20
IDM
99
Apk
PD
125
Watts
1.0
W/°C
Operating and Storage Temperature Range
TJ, Tstg
– 55 to 150
°C
Single Pulse Drain–to–Source Avalanche Energy — Starting TJ = 25°C
(VDD = 25 Vdc, VGS = 10 Vdc, IL = 33 Apk, L = 1.000 mH, RG = 25 Ω)
EAS
545
mJ
Thermal Resistance — Junction to Case
— Junction to Ambient
RθJC
RθJA
1.00
°C/W
62.5
Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 10 seconds
TL
260
°C
Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.
E–FET and Designer’s are trademarks of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.
Preferred devices are Motorola recommended choices for future use and best overall value.
REV 3
© MMoototororloa,laIncT.M19O95S Power MOSFET Transistor Device Data
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