MTP4N80 データシートの表示（PDF） - Motorola => Freescale
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MTP4N80
Motorola => Freescale
MTP4N80 Datasheet PDF : 8 Pages
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TYPICAL ELECTRICAL CHARACTERISTICS
MTP4N80E
8
TJ = 25°C
7
6
5
4
VGS = 10 V
6V
5V
3
2
1
4V
0
0 2 4 6 8 10 12 14 16 18 20
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
Figure 1. On–Region Characteristics
8
VDS ≥ 10 V
7
6
5
100°C
4
25°C
3
2
1
TJ = –55°C
0
2.0 2.4 2.8 3.2 3.6 4.0 4.4 4.8 5.2 5.6
VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics
4.6
VGS = 10 V
3.8
3.0
2.2
TJ = 100°C
25°C
1.4
– 55°C
0.6
1
2
3
4
5
6
7
8
ID, DRAIN CURRENT (AMPS)
Figure 3. On–Resistance versus Drain Current
and Temperature
2.6
TJ = 25°C
2.5
2.4
2.3
2.2
2.1
VGS = 10 V
2.0
15 V
1.9
1.8
1
2
3
4
5
6
7
8
ID, DRAIN CURRENT (AMPS)
Figure 4. On–Resistance versus Drain Current
and Gate Voltage
2.2
VGS = 10 V
ID = 2 A
1.8
1.4
1.0
0.6
0.2
–50 –25
0
25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
Figure 5. On–Resistance Variation with
Temperature
10000
VGS = 0 V
1000
100
10
TJ = 125°C
100°C
25°C
1
0 100 200 300 400 500 600 700 800
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
Figure 6. Drain–To–Source Leakage
Current versus Voltage
Motorola TMOS Power MOSFET Transistor Device Data
3
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