HM5164165LJ-5 データシートの表示（PDF） - Hitachi -> Renesas Electronics

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HM5164165LJ-5

64M EDO DRAM (4-Mword × 16-bit) 8k refresh/4k refresh

Hitachi -> Renesas Electronics 

HM5164165 Series, HM5165165 Series

Write Cycle

Parameter

Write command setup time

Write command hold time

Write command pulse width

Write command to RAS lead time

Write command to CAS lead time

Data-in setup time

Data-in hold time

Symbol

t WCS

t WCH

t WP

t RWL

t CWL

t DS

t DH

HM5164165/HM5165165

-5

-6

Min Max Min Max

0

—

0

—

8

—

10

—

8

—

10

—

13

—

15

—

8

—

10

—

0

—

0

—

8

—

10

—

Unit

ns

ns

ns

ns

ns

ns

ns

Notes

14, 28

28

30

15, 30

15, 30

Read-Modify-Write Cycle

Parameter

Read-modify-write cycle time

RAS to WE delay time

CAS to WE delay time

Column address to WE delay time

OE hold time from WE

Symbol

t RWC

t RWD

t CWD

t AWD

t OEH

HM5164165/HM5165165

-5

-6

Min Max Min Max

116 —

140 —

67

—

79

—

30

—

34

—

42

—

49

—

13

—

15

—

Unit

ns

ns

ns

ns

ns

Notes

14

14

14

Refresh Cycle

Parameter

CAS setup time (CBR refresh cycle)

CAS hold time (CBR refresh cycle)

WE setup time (CBR refresh cycle)

WE hold time (CBR refresh cycle)

RAS precharge to CAS hold time

Symbol

t CSR

t CHR

t WRP

t WRH

t RPC

HM5164165/HM5165165

-5

-6

Min Max Min Max

5

—

5

—

8

—

10

—

0

—

0

—

8

—

10

—

5

—

5

—

Unit

ns

ns

ns

ns

ns

Notes

28

29

28

14

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