MC-458CB646PFB-A80 データシートの表示（PDF） - NEC => Renesas Technology

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MC-458CB646PFB-A80

8M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE

NEC => Renesas Technology 

DATA SHEET

MOS INTEGRATED CIRCUIT

MC-458CB646

8M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE

UNBUFFERED TYPE

5 Description

The MC-458CB646EFB and MC-458CB646PFB are 8,388,608 words by 64 bits synchronous dynamic RAM module

on which 4 pieces of 128M SDRAM: µPD45128163 are assembled.

This module provides high density and large quantities of memory in a small space without utilizing the surface-

mounting technology on the printed circuit board.

Decoupling capacitors are mounted on power supply line for noise reduction.

Features

• 8,388,608 words by 64 bits organization

• Clock frequency and access time from CLK

Part number

/CAS latency

MC-458CB646EFB-A80

MC-458CB646EFB-A10

5 MC-458CB646PFB-A80

5 MC-458CB646PFB-A10

CL = 3

CL = 2

CL = 3

CL = 2

CL = 3

CL = 2

CL = 3

CL = 2

Clock frequency

(MAX.)

125 MHz

100 MHz

100 MHz

77 MHz

125 MHz

100 MHz

100 MHz

77 MHz

Access time from CLK

(MAX.)

6 ns

6 ns

6 ns

7 ns

6 ns

6 ns

6 ns

7 ns

• Fully Synchronous Dynamic RAM, with all signals referenced to a positive clock edge

• Pulsed interface

• Possible to assert random column address in every cycle

• Quad internal banks controlled by BA0 and BA1 (Bank Select)

• Programmable burst-length (1, 2, 4, 8 and full page)

• Programmable wrap sequence (sequential / interleave)

• Programmable /CAS latency (2, 3)

• Automatic precharge and controlled precharge

• CBR (Auto) refresh and self refresh

• All DQs have 10 Ω ± 10 % of series resistor

• Single 3.3 V ± 0.3 V power supply

• LVTTL compatible

• 4,096 refresh cycles/64 ms

• Burst termination by Burst Stop command and Precharge command

• 168-pin dual in-line memory module (Pin pitch = 1.27 mm)

• Unbuffered type

• Serial PD

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all devices/types available in every country. Please check with local NEC representative for

availability and additional information.

Document No. M13049EJ7V0DS00 (7th edition)

Date Published January 2000 NS CP(K)

The mark • shows major revised points.

Printed in Japan

©

1997

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