HYB39S64160AT データシートの表示（PDF） - Infineon Technologies
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HYB39S64160AT Datasheet PDF : 53 Pages
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Timing Diagrams (cont’d)
18. Random Row Read ( Interleaving Banks) with Precharge
18.1 CAS Latency = 2
18.2 CAS Latency = 3
19. Random Row Write ( Interleaving Banks) with Precharge
19.1 CAS Latency = 2
19.2 CAS Latency = 3
20. Full Page Read Cycle
20.1 CAS Latency = 2
20.2 CAS Latency = 3
21. Full Page Write Cycle
21.1 CAS Latency = 2
21.2 CAS Latency = 3
22. Precharge Termination of a Burst
22.1 CAS Latency = 2
22.2 CAS Latency = 3
HYB39S64400/800/160AT(L)
64MBit Synchronous DRAM
Semiconductor Group
21
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