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HYB39S64160AT データシートの表示(PDF) - Infineon Technologies
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HYB39S64160AT
64Mbit Synchronous DRAM
Infineon Technologies
HYB39S64160AT Datasheet PDF : 53 Pages
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4 2. Minimum Read to Write Interval
HYB39S64400/800/160AT(L)
64MBit Synchronous DRAM
(Burst Length = 4, CAS latency = 2)
T0
T1
T2
T3
T4
T5
T6
CLK
DQM
COMMAND
NOP
NOP
t
DQZ
BANK A
ACTIVATE
NOP
t
DQW
1 Clk Interval
READ A
WRITE A
NOP
T7
NOP
T8
NOP
CAS latency = 2
t
CK2,
DQ’s
Must be Hi-Z before
the Write Command
DIN A0
DIN A1
DIN A2
DIN A3
: “H” or “L”
4. 3. Non-Minimum Read to Write Interval
(Burst Length = 4, CAS latency = 2, 3
T0
T1
T2
T3
T4
T5
T6
T7
T8
CLK
DQM
COMMAND
NOP
CAS latency = 2
t
CK2,
DQ’s
READ A
NOP
t
DQZ
NOP
READ A
t
DQW
NOP
WRITE B
DOUT A0
Must be Hi-Z before
the Write Command
DOUT A1
DIN B0
NOP
DIN B1
NOP
DIN B2
CAS latency = 3
t
CK3,
DQ’s
DOUT A0
DIN B0
DIN B1
DIN B2
: “H” or “L”
Semiconductor Group
24
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