SURS8320T3G データシートの表示（PDF） - ON Semiconductor
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SURS8320T3G Datasheet PDF : 6 Pages
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MURS320T3G, SURS8320T3G, MURS340T3G, SURS8340T3G, MURS360T3G,
SURS8360T3G
MAXIMUM RATINGS
Rating
Symbol
MURS320T3G/
SURS8320T3G
MURS340T3G/
SURS8340T3G
MURS360T3G/
SURS8360T3G Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current
VRRM
200
400
600
V
VRWM
VR
IF(AV)
3.0 @ TL = 140°C 3.0 @ TL = 130°C 3.0 @ TL = 130°C
A
4.0 @ TL = 130°C 4.0 @ TL = 115°C 4.0 @ TL = 115°C
Non−Repetitive Peak Surge Current
IFSM
A
(Surge applied at rated load conditions halfwave,
100
single phase, 60 Hz)
Operating Junction Temperature
TJ
*65 to +175
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
Thermal Resistance, Junction−to−Lead
RqJL
11
°C/W
ELECTRICAL CHARACTERISTICS
Maximum Instantaneous Forward Voltage (Note 1)
vF
(iF = 3.0 A, TJ = 25°C)
0.875
1.25
(iF = 4.0 A, TJ = 25°C)
0.89
1.28
(iF = 3.0 A, TJ = 150°C)
0.71
1.05
Maximum Instantaneous Reverse Current (Note 1)
iR
(Rated dc Voltage, TJ = 25°C)
5.0
10
(Rated dc Voltage, TJ = 150°C)
150
250
V
1.25
1.28
1.05
mA
10
250
Maximum Reverse Recovery Time
trr
ns
(iF = 1.0 A, di/dt = 50 A/ms)
35
75
75
(iF = 0.5 A, iR = 1.0 A, IREC to 0.25 A)
25
50
50
Maximum Forward Recovery Time
tfr
ns
(iF = 1.0 A, di/dt = 100 A/ms, Recovery to 1.0 V)
25
50
50
Typical Peak Reverse Recovery Current
IRM
0.8
A
(IF = 1.0 A, di/dt = 50 A/ms)
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
1. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2.0%.
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