BLF547 データシートの表示（PDF） - Philips Electronics
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BLF547 Datasheet PDF : 12 Pages
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Philips Semiconductors
UHF push-pull power MOS transistor
Product specification
BLF547
2
handbook, halfpage
Zi
(Ω)
ri
0
MRB023
−2
xi
−4
−6
100
200
300
400
500
f (MHz)
Class-B operation; VDS = 28 V; IDQ = 100 mA (per section);
PL = 100 W (total device).
Fig.13 Input impedance as a function of frequency
(series components), typical values per
section.
10
handbook, halfpage
ZL
(Ω)
8
MRB026
6
RL
4
XL
2
0
100
200
300
400
500
f (MHz)
Class-B operation; VDS = 28 V; IDQ = 100 mA (per section);
PL = 100 W (total device).
Fig.14 Load impedance as a function of frequency
(series components), typical values per
section.
handbook, halfpage
Zi
ZL MBA379
Fig.15 Definition of MOS impedance.
October 1992
handbook, 3h0alfpage
GP
(dB)
20
MRB022
10
0
100
200
300
400
500
f (MHz)
Class-B operation; VDS = 28 V; IDQ = 100 mA (per section);
PL = 100 W (total device).
Fig.16 Power gain as a function of frequency,
typical values per section.
10
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