BLF547 データシートの表示（PDF） - Philips Electronics
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BLF547 Datasheet PDF : 12 Pages
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Philips Semiconductors
UHF push-pull power MOS transistor
Product specification
BLF547
FEATURES
• High power gain
• Easy power control
• Good thermal stability
• Gold metallization ensures
excellent reliability
• Designed for broadband operation.
DESCRIPTION
Dual push-pull silicon N-channel
enhancement mode vertical D-MOS
transistor designed for
communications transmitter
applications in the UHF frequency
range.
The transistor is encapsulated in a
4-lead, SOT262A2 balanced flange
envelope, with two ceramic caps. The
mounting flange provides the
common source connection for the
transistors.
PIN CONFIGURATION
halfpage
1
2
5
3
Top view
5
4
MSB008
d2
g2
s
g1
d1
MBB157
Fig.1 Simplified outline and symbol.
CAUTION
The device is supplied in an antistatic package. The gate-source input must
be protected against static charge during transport and handling.
PINNING - SOT262A2
PIN
DESCRIPTION
1 drain 1
2 drain 2
3 gate 1
4 gate 2
5 source
WARNING
Product and environmental safety - toxic materials
This product contains beryllium oxide. The product is entirely safe provided
that the BeO discs are not damaged. All persons who handle, use or dispose
of this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to
the regulations applying at the location of the user. It must never be thrown
out with the general or domestic waste.
QUICK REFERENCE DATA
RF performance at Th = 25 °C in a push-pull common-source test circuit.
MODE OF OPERATION
f
VDS
(MHz)
(V)
PL
(W)
GP
(dB)
ηD
(%)
CW, class-B
500
28
100
> 10
> 50
October 1992
2
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