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BLF547 データシートの表示(PDF) - Philips Electronics

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BLF547
Philips
Philips Electronics Philips
BLF547 Datasheet PDF : 12 Pages
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Philips Semiconductors
UHF push-pull power MOS transistor
APPLICATION INFORMATION FOR CLASS-B OPERATION
Th = 25 °C; Rth mb-h = 0.15 K/W, unless otherwise specified.
RF performance in a common source, push-pull, class-B test circuit.
MODE OF OPERATION
CW, class-B
f
(MHz)
500
VDS
IDQ
PL
(V)
(mA)
(W)
28
2 × 100
100
Ruggedness in class-B operation
The BLF547 is capable of withstanding a load mismatch
corresponding to VSWR = 10 through all phases under the
following conditions:
VDS = 28 V; f = 500 MHz at rated output power.
Product specification
BLF547
GP
(dB)
> 10
typ. 12
ηD
(%)
> 50
typ. 55
25
handbook, halfpage
GP
(dB)
20
GP
15
10
η
5
0
20
60
MRB021 100
η
(%)
80
60
40
20
0
100
140
PL (W)
Class-B operation; VDS = 28 V; IDQ = 2 × 100 mA;
f = 500 MHz; ZL = 1.5 + j1.8 (per section).
Fig.9 Power gain and efficiency as functions of
load power, typical values.
handbook1, 6h0alfpage
PL
(W)
120
MRB028
80
40
0
0
4
8
12
16
20
PIN (W)
Class-B operation; VDS = 28 V; IDQ = 2 × 100 mA;
f = 500 MHz; ZL = 1.5 + j1.8 (per section).
Fig.10 Load power as a function of input power,
typical values.
October 1992
6

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