NAND01G-M データシートの表示（PDF） - STMicroelectronics

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NAND01G-M

256/512Mb/1Gb (x8/x16, 1.8/3V, 528 Byte Page) NAND Flash Memories + 256/512Mb (x16/x32, 1.8V) LPSDRAM, MCP

STMicroelectronics 

Summary description

NAND256-M, NAND512-M, NAND01G-M

Table 3.

Signal Names: NAND Flash & 2 x SDR LPSDRAMs

NAND Flash

I/O0-I/O7

Data Inputs/Outputs

AL

Address Latch Enable

CL

Command Latch Enable

EF

Chip Enable

R

Read Enable

RB

Ready/Busy (open-drain output)

WF

Write Enable

WP

Write Protect

VDDF

VSSF

Supply Voltage

Ground

SDR LPSDRAM

A0-A12

Row Address: RA0-RA11

Column Address: CA0-CA8

Auto-precharge flag: A10

BA0-BA1

Bank Address

DQ0-DQ15

DQ16-DQ31

K

Data Inputs/Outputs for x16 devices SDR0

Data Inputs/Outputs for x16 devices SDR1

Clock Input

KE

Clock Enable Input

E0D

E1D

WD

RAS

Chip Select input for SDR0

Chip Select input for SDR1

Write Enable Input

Row Address Strobe Input

CAS

Column Address Strobe Input

DQM0

DQM1

DQM2

DQM3

VDDD

VDDQD

VSSD

VSSQD

NC

Lower DQ Mask Enable Output for SDR0

Upper DQ Mask Enable Output for SDR0

Lower DQ Mask Enable Output for SDR1

Upper DQ Mask Enable Output for SDR1

Supply Voltage

Input/Output Supply Voltage

Ground

Input/Output Ground

Not Connected Internally

10/23

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