NCP1253
MAXIMUM RATINGS TABLE
Symbol
Rating
Value
Unit
VCC
Power Supply voltage, Vcc pin, continuous voltage
Maximum voltage on low power pins CS, and FB
28
V
−0.3 to 10
V
RqJ−A
TJ,max
Thermal Resistance Junction−to−Air
Maximum Junction Temperature
Storage Temperature Range
360
150
−60 to +150
°C/W
°C
°C
ESD Capability, Human Body Model, all pins
2
kV
ESD Capability, Machine Model
200
V
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. This device series contains ESD protection and exceeds the following tests: Human Body Model 2000 V per Mil−Std−883, Method 3015.
Machine Model Method 200 V.
2. This device contains latch−up protection and exceeds 100 mA per JEDEC Standard JESD78.
ELECTRICAL CHARACTERISTICS
(For typical values TJ = 25°C, for min/max values TJ = −40°C to +125°C, Max TJ = 150°C, VCC = 12 V unless otherwise noted)
Symbol
Rating
Pin Min
Typ
Max Unit
VCCON
VCC(min)
VCCHYST
VZENER
ICC1
VCC increasing level at which driving pulses are authorized
VCC decreasing level at which driving pulses are stopped
Hysteresis VCCON−VCC(min)
Clamped VCC when latched off @ ICC = 500 mA
Start−up current
5
16
18
20
V
5
8.2
8.8
9.4
V
5
6
−
−
V
5
−
7
−
V
5
−
−
15
mA
ICC2
Internal IC consumption with IFB = 50 mA, FSW = 65 kHz and CL = 0
5
−
1.4
2.2
mA
ICC3
Internal IC consumption with IFB = 50 mA, FSW = 65 kHz and CL = 1 nF
5
−
2.1
3.0
mA
ICC2
Internal IC consumption with IFB = 50 mA, FSW = 100 kHz and CL = 0
5
−
1.7
2.5
mA
ICC3
Internal IC consumption with IFB = 50 mA, FSW = 100 kHz and CL = 1 nF
5
−
3.1
4.0
mA
ICCstby Internal IC consumption while in skip mode (VCC = 12 V, driving a typical
5
550
mA
6 A/600 V MOSFET)
ICCLATCH Current flowing into VCC pin that keeps the controller latched –
5
32
mA
TJ = 0 to 125°C
ICCLATCH Current flowing into VCC pin that keeps the controller latched –
5
40
mA
TJ = −40°C to 125°C
DRIVE OUTPUT
Tr
Output voltage rise−time @ CL = 1 nF, 10−90% of output signal
Tf
Output voltage fall−time @ CL = 1 nF, 10−90% of output signal
ROH
Source resistance
ROL
Sink resistance
Isource Peak source current, VGS = 0 V (Note 3)
Isink
Peak sink current, VGS = 12 V (Note 3)
VDRVlow DRV pin level at VCC close to VCC(min) with a 33 kW resistor to GND
VDRVhigh DRV pin level at VCC= 28 V – DRV unloaded
3. Guaranteed by design
6
−
40
−
ns
6
−
30
−
ns
6
−
13
−
W
6
−
6
−
W
6
300
mA
6
500
mA
6
8
−
−
V
6
10
12
14
V
CURRENT COMPARATOR
IIB
VLimit1
VLimit2
Input Bias Current @ 0.8 V input level on pin 4
Maximum internal current setpoint – TJ = 25 °C
Maximum internal current setpoint – TJ = −40° to 125 °C
4
0.02
mA
4
0.744
0.8
0.856
V
4
0.72
0.8
0.88
V
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