NCP3066 データシートの表示（PDF） - ON Semiconductor
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NCP3066
ON Semiconductor
NCP3066 Datasheet PDF : 20 Pages
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NCP3066, NCV3066
MAXIMUM RATINGS (measured vs. Pin 4, unless otherwise noted)
Rating
Symbol
Value
Unit
VCC Pin 6
Comparator Inverting Input Pin 5
Darlington Switch Collector Pin 1
Darlington Switch Emitter Pin 2 (Transistor OFF)
Darlington Switch Collector to Emitter Pins 1−2
Darlington Switch Current
Ipk Sense Pin 7
Timing Capacitor Pin Voltage (Pin 3)
Moisture Sensitivity Level
VCC
0 to +42
V
VCII
−0.3 to + VCC
V
VSWC
−0.3 to + 42
V
VSWE
−0.6 to + VCC
V
VSWCE
−0.3 to + 42
V
ISW
1.5
A
VIPK
−0.3 to VCC+ 0.3
V
VTC
−0.2 to +1.4
V
MSL
1
−
Lead Temperature Soldering
ON/OFF Pin voltage
POWER DISSIPATION AND THERMAL CHARACTERISTICS
TSLD
260
°C
VON/OFF (−0.3 to +25) < VCC
V
PDIP−8 (Note 5)
Thermal Resistance Junction−to−Air
RqJA
°C/W
100
SOIC−8 (Note 5)
Thermal Resistance Junction−to−Air
RqJA
°C/W
180
DFN−8 (Note 5)
Thermal Resistance Junction−to−Air
Thermal Resistance Junction−to−Case
Storage Temperature Range
Maximum Junction Temperature
Operating Junction Temperature Range (Note 3)
NCP3066
NCV3066
RqJA
RqJC
TSTG
TJMAX
TJ
78
14
−65 to +150
+150
0 to +85
−40 to +125
°C/W
°C
°C
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. This device series contains ESD protection and exceeds the following tests:
Pin 1−8: Human Body Model 2000 V per AEC Q100−002; 003 or JESD22/A114; A115
Machine Model Method 200 V
2. This device contains latch−up protection and exceeds 100 mA per JEDEC Standard JESD78.
3. The relation between junction temperature, ambient temperature and Total Power dissipated in IC is TJ = TA + Rq • PD.
4. The pins which are not defined may not be loaded by external signals.
5. 35 mm copper, 10 cm2 copper area.
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