NCP349 データシートの表示（PDF） - ON Semiconductor
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NCP349 Datasheet PDF : 13 Pages
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NCP349
ELECTRICAL CHARACTERISTICS (Min/Max limits values (−40°C < TA < +85°C) and Vin = +5.0 V. Typical values are TA = +25°C,
unless otherwise noted.)
Characteristic
Symbol
Conditions
Min Typ Max Unit
Input Voltage Range
Undervoltage Lockout Threshold (Note 4)
NCP349MN, NCP349MNAE, NCP349MNAM
NCP349MNBG, NCP349MNBK
Vin
UVLO
−
1.2
−
28
V
Vin falls below UVLO threshold
V
from 5 V to 2.7 V
2.8 2.95 3.1
3.0 3.25 3.5
Undervoltage Lockout Hysteresis
Overvoltage Lockout Threshold (Note 4)
NCP349MNAE
NCP349MNBG
NCP349MNBK
NCP349MN
NCP349MNAM
UVLOhyst Vin rises above UVLO + UVLOhyst 30
60
90
mV
OVLO
Vin rises above OVLO threshold
V
5.53 5.68 5.83
5.70 6.02 6.40
6.0
6.4
6.8
6.67 6.85 7.05
6.8
7.2
7.6
Overvoltage Lockout Hysteresis
OVLOhyst Vin falls below OVLO + OVLOhyst
mV
NCP349MN, NCP349MNAE, NCP349MNBG
30
60
90
NCP349MNBK
50 100 150
NCP349MNAM
50
70
100
Vin versus Vout Resistance
Supply Quiescent Current
RDS(on)
Idd
Vin = 5.0 V, EN = GND,
Load connected to Vout
No load. EN = 5.0 V
−
65
110 mW
−
70
150
mA
No load. EN = Gnd
−
140 250
mA
UVLO Supply Current
FLAG Output Low Voltage
Idduvlo
Volflag
VIN = 2.7 V
1.2 V < VIN < UVLO
Sink 50 mA on/FLAG pin
−
60
−
mA
−
20
400 mV
VIN > OVLO
Sink 1.0 mA on FLAG pin
−
−
400 mV
FLAG Leakage Current
EN Voltage High
FLAGleak
Vih
FLAG level = 5.0 V
−
−
1.0
−
nA
1.2
−
−
V
EN Voltage Low
Vol
−
−
−
0.4
V
EN Leakage Current
ENleak
EN = 5.0 V or GND
−
1.0
−
nA
TIMINGS
Startup Delay
ton
NCP349MN
NCP349MNAE
NCP349MNBG, NCP349MNBK, NCP349MNAM
From Vin > UVLO to Vout = 0.3 V
ms
(See Figures 3 & 7)
1.0
1.8
2.7
6.0
10
14
30
55
70
FLAG Going Up Delay
NCP349MN
tstart
From Vout = 0.3 V to FLAG = 1.2 V
ms
(See Figures 3 & 9)
0.4
1.2
2.1
NCP349MNAE
6.0
10
14
NCP349MNBG, NCP349MNBK, NCP349MNAM
30
55
70
Output Turn Off Time
Alert Delay
Disable Time
toff
From Vin > OVLO to Vout < = 0.3 V
−
1.5
5.0
ms
(See Figures 4 & 8)
Vin increasing from 5.0 V to 8.0 V
at 3.0 V/ms
Rload connected on Vout
tstop
From Vin > OVLO to FLAG < =
−
1.0
−
ms
0.4 V (See Figures 4 & 10)
Vin increasing from 5.0 V to 8.0 V
at 3.0 V/ms
Rload connected on Vout
tdis
From EN > = 1.2 V to
−
1.0
5.0
ms
Vout < 0.3 V
Rload = 5.0 W
(See Figures 5 & 12)
NOTE: Electrical parameters are guaranteed by correlation across the full range of temperature.
4. Additional UVLO and OVLO thresholds ranging from UVLO and from OVLO can be manufactured. Contact your ON Semiconductor
representative for availability.
http://onsemi.com
4
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