NCV7380 データシートの表示（PDF） - ON Semiconductor

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NCV7380

LIN Transceiver

ON Semiconductor 

NCV7380

Electrical Specification

All voltages are referenced to ground (GND). Positive

currents flow into the IC.

The maximum ratings given in the table below are

limiting values that do not lead to a permanent damage of

OPERATING CONDITIONS

Characteristic

Battery Supply Voltage (Note 1)

Supply Voltage

Operating Ambient Temperature

the device but exceeding any of these limits may do so.

Long term exposure to limiting values may effect the

reliability of the device.

Symbol

Min

Max

Unit

VS

7.0

18

V

VCC

4.5

5.5

V

TA

−40

+125

°C

MAXIMUM RATINGS

Rating

Battery Supply Voltage

Supply Voltage

Transient Supply Voltage

Transient Supply Voltage

Transient Supply Voltage

BUS Voltage

Transient Bus Voltage

Transient Bus Voltage

Transient Bus Voltage

DC Voltage on Pins TxD, RxD

ESD Capability, Charged Device Model

ESD Capability of RxD, TxD, VCC, BUS Pins

ESD Capability of VS Pin

Maximum Latchup Free Current at Any Pin

Maximum Power Dissipation

Thermal Impedance

Storage Temperature

Junction Temperature

Symbol

VS

VCC

VS.tr1

VS..tr2

VS..tr3

VBUS

VBUS..tr1

VBUS.tr2

VBUS.tr3

VDC

VESDCDM

VESDHBM

ILATCH

Ptot

qJA

Tstg

TJ

Condition

t < 1 min

Load Dump, t < 500 ms

−

ISO 7637/1 Pulse 1 (Note 2)

ISO 7637/1 Pulses 2 (Note 2)

ISO 7637/1 Pulses 3A, 3B

t < 500 ms , Vs = 18 V

t < 500 ms ,Vs = 0 V

ISO 7637/1 Pulse 1 (Note 3)

ISO 7637/1 Pulses 2 (Note 3)

ISO 7637/1 Pulses 3A, 3B (Note 3)

−

(Note 4)

Human body model, equivalent to

discharge 100 pF with 1.5 kW (Note 4)

−

At TA = 125°C

In Free Air

−

−

Min

−0.3

−0.3

−150

−

−150

−27

−40

−150

−

−150

−0.3

−1.0

−2.0

−1.5

−500

−

−

−55

−40

Max

30

40

+7.0

−

100

150

40

−

100

150

7.0

1.0

2.0

1.5

500

197

152

+150

+150

Unit

V

V

V

V

V

V

V

V

V

V

kV

kV

kV

mA

mW

°C/W

°C

°C

LEAD TEMPERATURE SOLDERING REFLOW

Lead Free, 60 sec −150 sec above 217, 40 sec Max at Peak

TSLD

−

265 Peak

°C

Leaded, 60 sec −150 sec above 183, 30 sec Max at Peak

TSLD

−

240 Peak

°C

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the

Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect

device reliability.

1. VS is the IC supply voltage including voltage drop of reverse battery protection diode, VDROP = 0.4 to 1.0 V, VBAT_ECU voltage range is

7.0 to 18 V.

2. ISO 7637 test pulses are applied to VS via a reverse polarity diode and > 2.0 mF blocking capacitor.

3. ISO 7637 test pulses are applied to BUS via a coupling capacitance of 1.0 nF.

4. This device incorporates ESD protection and is tested by the following methods:

ESD HBM tested per AEC−Q100−002 (EIA/JESD22−A 114C)

ESD CDM tested per EIA/JESD22−C 101C, Field Induced Model.

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