NCV8401(2010) データシートの表示（PDF） - ON Semiconductor

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NCV8401
(Rev.:2010)

Self-Protected Low Side Driver with Temperature and Current Limit

ON Semiconductor 

NCV8401

MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)

Rating

Symbol

Value

Unit

Drain−to−Source Voltage Internally Clamped

VDSS

42

V

Drain−to−Gate Voltage Internally Clamped

(RGS = 1.0 MW)

VDGR

42

V

Gate−to−Source Voltage

VGS

"14

V

Drain Current − Continuous

ID

Internally Limited

Total Power Dissipation

@ TA = 25°C (Note 1)

@ TA = 25°C (Note 2)

PD

W

1.1

2.0

Thermal Resistance,

Junction−to−Case

Junction−to−Ambient (Note 1)

Junction−to−Ambient (Note 2)

RqJC

RqJA

RqJA

1.6

°C/W

110

60

Single Pulse Drain−to−Source Avalanche Energy

EAS

(VDD = 25 Vdc, VGS = 5.0 Vdc, IL = 3.65 Apk, L = 120 mH, RG = 25 W, TJstart = 150°C) (Note 3)

800

mJ

Load Dump Voltage (VGS = 0 and 10 V, RI = 2.0 W, RL = 3.0 W, td = 400 ms)

Operating Junction Temperature

VLD

65

V

TJ

−40 to 150

°C

Storage Temperature

Tstg

−55 to 150

°C

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the

Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect

device reliability.

1. Minimum FR4 PCB, steady state.

2. Mounted onto a 2″ square FR4 board

(1″ square, 2 oz. Cu 0.06″ thick single−sided, t = steady state).

3. Not subject to production testing.

+

ID

IG

+

VGS

GATE

DRAIN

SOURCE

VDS

−

−

Figure 1. Voltage and Current Convention

http://onsemi.com

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