NCV8401(2010) データシートの表示（PDF） - ON Semiconductor
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NCV8401 Datasheet PDF : 10 Pages
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NCV8401
MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Characteristic
Symbol
OFF CHARACTERISTICS
Drain−to−Source Clamped Breakdown Voltage
(VGS = 0 Vdc, ID = 250 mAdc)
(VGS = 0 Vdc, ID = 250 mAdc, TJ = 150°C) (Note 4)
Zero Gate Voltage Drain Current
(VDS = 32 Vdc, VGS = 0 Vdc)
(VDS = 32 Vdc, VGS = 0 Vdc, TJ = 150°C) (Note 4)
Gate Input Current
(VGS = 5.0 Vdc, VDS = 0 Vdc)
V(BR)DSS
IDSS
IGSSF
ON CHARACTERISTICS
Gate Threshold Voltage
(VDS = VGS, ID = 1.2 mAdc)
Threshold Temperature Coefficient
VGS(th)
Static Drain−to−Source On−Resistance (Note 5)
(VGS = 10 Vdc, ID = 5.0 Adc, TJ @ 25°C)
(VGS = 10 Vdc, ID = 5.0 Adc, TJ @ 150°C) (Note 4)
RDS(on)
Static Drain−to−Source On−Resistance (Note 5)
(VGS = 5.0 Vdc, ID = 5.0 Adc, TJ @ 25°C)
(VGS = 5.0 Vdc, ID = 5.0 Adc, TJ @ 150°C) (Note 4)
Source−Drain Forward On Voltage
(IS = 5 A, VGS = 0 V)
RDS(on)
VSD
SWITCHING CHARACTERISTICS (Note 4)
Turn−ON Time (10% VIN to 90% ID)
Turn−OFF Time (90% VIN to 10% ID)
Turn−ON Time (10% VIN to 90% ID)
Turn−OFF Time (90% VIN to 10% ID)
Slew−Rate ON (20% VDS to 50% VDS)
Slew−Rate OFF (80% VDS to 50% VDS)
VIN = 0 V to 5 V, VDD = 25 V
ID = 1.0 A, Ext RG = 2.5 W
VIN = 0 V to 10 V, VDD = 25 V,
ID = 1.0 A, Ext RG = 2.5 W
Vin = 0 to 10 V, VDD = 12 V,
RL = 4.7 W
tON
tOFF
tON
tOFF
−dVDS/dtON
dVDS/dtOFF
SELF PROTECTION CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Current Limit
VGS = 5.0 V, VDS = 10 V
ILIM
VGS = 5.0 V, TJ = 150°C (Note 4)
VGS = 10 V, VDS = 10 V
VGS = 10 V, TJ = 150°C (Note 4)
Temperature Limit (Turn−off)
Thermal Hysteresis
Temperature Limit (Turn−off)
Thermal Hysteresis
VGS = 5.0 V (Note 4)
VGS = 5.0 V
VGS = 10 V (Note 4)
VGS = 10 V
TLIM(off)
DTLIM(on)
TLIM(off)
DTLIM(on)
GATE INPUT CHARACTERISTICS (Note 4)
Device ON Gate Input Current
Current Limit Gate Input Current
Thermal Limit Fault Gate Input Current
VGS = 5 V ID = 1.0 A
VGS = 10 V ID = 1.0 A
VGS = 5 V, VDS = 10 V
VGS = 10 V, VDS = 10 V
VGS = 5 V, VDS = 10 V
VGS = 10 V, VDS = 10 V
IGON
IGCL
IGTL
ESD ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) (Note 4)
Electro−Static Discharge Capability
Human Body Model (HBM)
Machine Model (MM)
ESD
4. Not subject to production testing.
5. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%.
Min
42
42
1.0
25
11
30
18
150
150
4000
400
Typ
46
44
1.5
6.5
50
1.8
5.0
23
43
28
50
0.80
41
129
16
164
1.27
0.36
30
16
35
25
175
15
165
15
50
400
0.1
0.7
0.6
2.0
Max Unit
50
Vdc
50
mAdc
5.0
100 mAdc
2.0
Vdc
−mV/°C
mW
29
55
mW
34
60
1.1
V
50
ms
150
25
180
V/ms
35
Adc
21
40
28
200
°C
°C
185
°C
°C
mA
mA
mA
V
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