NCV8452STT3G(2012) データシートの表示（PDF） - ON Semiconductor

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NCV8452STT3G
(Rev.:2012)

Self Protected High Side Driver with Temperature Shutdown and Current Limit

ON Semiconductor 

NCV8452

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

DC Supply Voltage

Peak Transient Input Voltage

(Load Dump 46 V, VD = 14 V, ISO7637−2 pulse5) (Note 1)

VD

40

V

Vpeak

60

V

Input Voltage

VIN

−5 to VD

V

Input Current

IIN

±5

mA

Output Current

IOUT

Internally Limited

A

Power Dissipation

@TA = 25°C (Note 3)

@TA = 25°C (Note 4)

PD

W

1.19

1.76

Electrostatic Discharge (Note 1)

(HBM Model 100 pF / 1500 W)

Input

Output

VD

kV

±1

±5

±5

Single Pulse Inductive Load Switch Off Energy (Note 1)

(L = 4.55 H, VD = 13.5 V; IL = 0.5 A, TJstart = 25°C)

EAS

0.8

J

Operating Junction Temperature

TJ

−40 to +150

°C

Storage Temperature

Tstorage

−55 to +150

°C

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the

Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect

device reliability.

1. Not subjected to production testing

2. Reverse Output current has to be limited by the load to stay within absolute maximum ratings and thermal performance.

3. Minimum pad.

4. 1 in square pad size, FR−4, 1 oz Cu.

THERMAL RESISTANCE RATINGS

Parameter

Symbol

Max Value

Thermal Resistance (Note 5)

Junction−to−Lead

Junction−to−Ambient (Note 6)

Junction−to−Ambient (Note 7)

RthJL

10

RthJA

105

RthJA

71

5. Reverse Output current has to be limited by the load to stay within absolute maximum ratings and thermal performance.

6. Minimum pad.

7. 1 in square pad size, FR−4, 1 oz Cu.

Unit

°C/W

°C/W

°C/W

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