NCV8452(2012) データシートの表示（PDF） - ON Semiconductor

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NCV8452
(Rev.:2012)

Self Protected High Side Driver with Temperature Shutdown and Current Limit

ON Semiconductor 

NCV8452

ELECTRICAL CHARACTERISTICS (VD = 13.5 V; −40°C < TJ < 150°C unless otherwise specified)

Value

Rating

Operating Supply Voltage

Undervoltage Shutdown

Undervoltage Restart

Undervoltage Hysteresis

Overvoltage Shutdown

Overvoltage Restart

On−state Resistance

Standby Current

Active Ground Current

Output Leakage Current

INPUT CHARACTERISTICS

Symbol

Conditions

Min

Typ

Max

Unit

VD

5

−

34

V

VUV

2.5

5.5

V

VUV(res)

6.0

V

VUV(hyst)

0.3

VOV

34

42

V

VOV(res)

33

RON

IOUT = 0.5 A, VIN = 5 V, TJ = 25°C

IOUT = 0.5 A, VIN = 5 V, TJ = 150°C

160

200

mW

−

400

ID(off)

VIN = VOUT = 0 V

12

25

mA

IGND(on)

VIN = 5 V

1

1.8

mA

IOUT(off)

VIN = 0 V

2

mA

Input Voltage − Low

Input Voltage − High

Off State Input Current

On State Input Current

Input Threshold Hysteresis

Input Resistance

SWITCHING CHARACTERISTICS

VIN(low)

VIN(high)

IIN(off)

IIN(on)

VIN(hyst)

RI

VIN = 0.7 V

VIN = 5.0 V

0.8

V

2.2

V

10

mA

10

mA

0.3

V

1.5

2.8

3.5

kW

Turn−On Time

Turn−Off Time

Slew Rate On

Slew Rate Off

REVERSE BATTERY (Note 8)

ton

toff

dVOUT/dton

dVOUT/dtoff

to 90% VOUT, RL = 24 W

to 10% VOUT, RL = 24 W

10% to 30% VOUT, RL = 24 W

70% to 40% VOUT, RL = 24 W

60

120

ms

60

120

ms

1

4

V / ms

1

4

V / ms

Reverse Battery

−VD

Requires a 150 W

Resistor in GND Connection

32

V

Forward Voltage

VF

PROTECTION FUNCTIONS (Note 9)

TJ = 150°C

0.6

V

Temperature Shutdown (Note 8)

TSD

150

175

200

°C

Temperature Shutdown Hysteresis

(Note 8)

TSD(hyst)

10

°C

Overvoltage Protection

VOV

ID = 4 mA

41

V

Switch Off Output Clamp Voltage

VCLAMP

ID = 4 mA, VIN = 0 V

VD −

41

VD −

47

V

Output Current Limit Initial Peak

ILIM

VD = 20 V, TJ = 25°C

TJ = −40°C to150°C

1.8

1.0

−

3

A

8. Not subjected to production testing

9. To ensure long term reliability under heavy overload or short circuit conditions, protection and related diagnostic signals must be used

together with a proper hardware/software strategy. If the devices operates under abnormal conditions this hardware/software solutions must

limit the duration and number of activation cycles.

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