NCV887102D1R2G データシートの表示（PDF） - ON Semiconductor

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NCV887102D1R2G

Automotive Grade Non-Synchronous Boost Controller

ON Semiconductor 

NCV8871

ELECTRICAL CHARACTERISTICS (−40°C < TJ < 150°C, 3.2 V < VIN < 40 V, unless otherwise specified) Min/Max values are

guaranteed by test, design or statistical correlation.

Characteristic

Symbol

Conditions

Min Typ Max Unit

CURRENT SENSE AMPLIFIER

Current limit threshold voltage

Vcl

Voltage on ISNS pin

NCV887100

NCV887101

NCV887102

NCV887103

NCV887104

mV

360 400 440

360 400 440

360 400 440

180 200 220

180 200 220

Current limit,

Response time

Overcurrent protection,

Threshold voltage

tcl

%Vocp

CL tripped until GDRV falling edge,

VISNS = Vcl + 40 mV

Percent of Vcl

−

80

125

ns

125 150 175

%

Overcurrent protection,

Response Time

tocp

From overcurrent event, Until switching

stops, VISNS = VOCP + 40 mV

VOLTAGE ERROR OPERATIONAL TRANSCONDUCTANCE AMPLIFIER

−

−

125

ns

Transconductance

VEA output resistance

VFB input bias current

Reference voltage

VEA maximum output voltage

VEA minimum output voltage

VEA sourcing current

VEA sinking current

GATE DRIVER

gm,vea

Ro,vea

Ivfb,bias

Vref

Vc,max

Vc,min

Isrc,vea

Isnk,vea

VFB – Vref = ± 20 mV

Current out of VFB pin

VEA output current, Vc = 2.0 V

VEA output current, Vc = 0.7 V

0.8

1.2

1.5

mS

2.0

−

−

MW

−

0.5

2.0

mA

1.176 1.200 1.224

V

2.5

−

−

V

−

−

0.3

V

80

100

−

mA

80

100

−

mA

Sourcing current

Isrc

VDRV ≥ 6 V, VDRV − VGDRV = 2 V

NCV887100

NCV887101

NCV887102

NCV887103

NCV887104

mA

600 800

−

400 575

−

600 800

−

400 575

−

600 800

−

Sinking current

Isink

VGDRV ≥ 2 V

NCV887100

NCV887101

NCV887102

NCV887103

NCV887104

mA

500 600

−

250 350

−

500 600

−

250 350

−

500 600

−

Driving voltage dropout

Driving voltage source current

Backdrive diode voltage drop

Driving voltage

Vdrv,do

Idrv

Vd,bd

VDRV

VIN − VDRV, IvDRV = 25 mA

VIN − VDRV = 1 V

VDRV − VIN, Id,bd = 5 mA

IVDRV = 0.1 − 25 mA

NCV887100

NCV887101

NCV887102

NCV887103

NCV887104

−

0.3

0.6

V

35

45

−

mA

−

−

0.7

V

V

10

10.5

11

6.0

6.3

6.6

6.0

6.3

6.6

8.0

8.4

8.8

8.0

8.4

8.8

UVLO

Undervoltage lock−out,

Threshold voltage

Vuvlo

VIN falling

3.0

3.1

3.2

V

Undervoltage lock−out,

Hysteresis

Vuvlo,hys

VIN rising

50

125 200

mV

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