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NCV887601D1R2G データシートの表示(PDF) - ON Semiconductor

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NCV887601D1R2G Datasheet PDF : 17 Pages
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NCV8876
ELECTRICAL CHARACTERISTICS (40°C < TJ < 150°C, 3.6 V < VOUT < 40 V, unless otherwise specified) Min/Max values are
guaranteed by test, design or statistical correlation.
Characteristic
Symbol
Conditions
Min
Typ
Max
Unit
GATE DRIVER (Note 3)
Driving Voltage Source Current
Backdrive Diode Voltage Drop
Driving Voltage
Idrv
VOUT VDRV = 1 V
35
45
mA
Vd,bd
VDRV – VOUT, Id,bd = 5 mA
0.7
V
VDRV
IVDRV = 0.1 25 mA
NCV887600 5.8
6.0
6.2
V
NCV887601 5.8
6.0
6.2
UVLO
Undervoltage Lockout,
Threshold Voltage
Vuvlo,fall VOUT falling
3.4
3.59
3.8
V
Undervoltage Lockout
THERMAL SHUTDOWN
Vuvlo,rise VOUT rising
3.90 4.05 4.20
V
Thermal Shutdown Threshold
(Note 2)
Tsd
TJ rising
160
170
180
°C
Thermal Shutdown Hysteresis
(Note 2)
Tsd,hys
TJ falling
10
15
20
°C
Thermal Shutdown Delay (Note 2)
VOLTAGE REGULATION
tsd,dly
From TJ > Tsd to stop switching
100
ns
Voltage Regulation
VOUT,reg
NCV887600 6.66
6.8
6.94
V
NCV887601 6.66
6.8
6.94
Threshold IC Enable
VOUT descending
NCV887600 7.1
7.3
7.5
V
NCV887601 7.1
7.3
7.5
Threshold IC Disable
VOUT ascending
NCV887600 7.5
7.7
7.9
V
NCV887601 7.5
7.7
7.9
Threshold IC Enable – Voltage
Regulation
NCV887600 0.32
0.5
V
NCV887601 0.32
0.5
Threshold IC Disable – Threshold
IC Enable
NCV887600
0.4
V
NCV887601
0.4
2. Not tested in production. Limits are guaranteed by design.
3. An RGND = 15 kW GDRVGND resistor is strongly recommended.
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