ND2012L データシートの表示（PDF） - Temic Semiconductors
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ND2012L Datasheet PDF : 4 Pages
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ND2012L/2020L
Specificationsa
Parameter
Symbol
Test Conditions
Limits
ND2012L ND2020L
Typb Min Max Min Max Unit
Static
Drain-Source Breakdown Voltage
Gate-Source Cutoff Voltage
Gate-Body Leakage
V(BR)DSV
VGS(off)
IGSS
Drain Cutoff Current
ID(off)
Drain-Saturation Currentc
IDSS
Drain-Source On-Resistancec
rDS(on)
Forward Transconductancec
gfs
Common Source Output Conductancec
gos
Dynamic
VGS = –8 V, ID = 10 mA
220 200
VGS = –5 V, ID = 10 mA
220
200
V
VDS = 5 V, ID = 10 mA
–1.5 –4 –0.5 –2.5
VDS = 0 V, VGS = "20 V
TJ = 125_C
"10
"50
"10
nA
"50
VDS = 160 V, VGS = –8 V
1
TJ = 125_C
VDS = 160 V, VGS = –5 V
200
mA
1
TJ = 125_C
200
VDS = 10 V, VGS = 0 V
300 30
30
mA
VGS = 2 V, ID = 20 mA
7
VGS = 0 V, ID = 20 mA
8
12
20 W
TJ = 125_C 12.6
30
50
55
mS
VDS = 7.5 V, ID = 20 mA
75
mS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switchingd
Ciss
35
Coss
VDS = 25 V, VGS = –5 V, f = 1 MHz 10
Crss
2
100
100
20
20 pF
5
5
Turn-On Time
Turn-Off Time
td(on)
tr
td(off)
tf
20
VDD = 25 V, RL = 1250 W
20
ID ^ 20 mA, VGEN = -5 V
RG = 25 W
10
10
Notes
a. TA = 25_C unless otherwise noted.
b. For DESIGN AID ONLY, not subject to production testing.
c. Pulse test: PW v300 ms duty cycle v2%.
d. Switching time is essentially independent of operating temperature.
ns
VDDQ20
2
Siliconix
S-52426—Rev. C, 14-Apr-97
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