ND2012L データシートの表示（PDF） - Temic Semiconductors
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ND2012L Datasheet PDF : 4 Pages
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ND2012L/2020L
Typical Characteristics (25_C Unless Otherwise Noted) (Cont’d)
Normalized On-Resistance
vs. Junction Temperature
2.25
2.00
VGS = 0 V
ID = 20 mA
Forward Transconductance and Output
Conductance vs. Drain Current
350
700
VDS = 7.5 V
300 Pulse Test
600
80 ms, 1% Duty Cycle
1.75
250
500
1.50
200
400
1.25
150
300
1.00
100
0.75
50
0.50
0
–50 –10
30
70
110
150
1
TJ – Junction Temperature (_C)
gfs
gos
10
100
ID – Drain Current (A)
200
100
0
1K
Capacitance
120
VGS = –5 V
100 f = 1 MHz
Load Condition Effects on Switching
100
td(on)
VDD = 25 V
VGS = 0 to –5 V
RG = 25 W
80
60
40
C iss
tf
10
td(off)
tr
20
C oss
C rss
0
1
0
10
20
30
40
50
1
VDS – Drain-to-Source Voltage (V)
10
100
ID – Drain Current (A)
Normalized Effective Transient Thermal Impedance, Junction-to-Ambient (TO-226AA)
1
Duty Cycle = 0.5
0.2
0.1
0.1 0.05
0.02
0.01
0.1
0.01
Single Pulse
1
4
10
100
t1 – Square Wave Pulse Duration (sec)
Notes:
PDM
t1
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = RthJA = 156_C/W
3. TJM – TA = PDMZthJA(t)
1K
10 K
Siliconix
S-52426—Rev. C, 14-Apr-97
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