NDS356 データシートの表示（PDF） - Fairchild Semiconductor

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NDS356

P-Channel Logic Level Enhancement Mode Field Effect Transistor

Fairchild Semiconductor 

Electrical Characteristics (TA = 25°C unless otherwise noted)

Symbol Parameter

Conditions

Min Typ Max Units

OFF CHARACTERISTICS

BVDSS

IDSS

Drain-Source Breakdown Voltage

Zero Gate Voltage Drain Current

IGSSF

Gate - Body Leakage, Forward

IGSSR

Gate - Body Leakage, Reverse

ON CHARACTERISTICS (Note 2)

VGS = 0 V, ID = -250 µA

VDS = -16 V, VGS = 0 V

VGS = 12 V, VDS = 0 V

VGS = -12 V, VDS = 0 V

-20

TJ =125°C

V

-5

µA

-20

µA

100 nA

-100 nA

VGS(th)

RDS(ON)

Gate Threshold Voltage

Static Drain-Source On-Resistance

ID(ON)

On-State Drain Current

gFS

Forward Transconductance

DYNAMIC CHARACTERISTICS

VDS = VGS, ID = -250 µA

-0.8 -1.6 -2.5

V

TJ =125°C -0.5 -1.3 -2.2

VGS = -4.5 V, ID = -1.1 A

0.3

Ω

TJ =125°C

0.4

VGS = -10 V, ID = -1.3 A

0.21

VGS = -4.5 V, VDS = -5 V

-3

A

VDS = -5 V, ID = -1.1 A

1.8

S

Ciss

Input Capacitance

Coss

Output Capacitance

Crss

Reverse Transfer Capacitance

SWITCHING CHARACTERISTICS (Note 2)

VDS = -10 V, VGS = 0 V,

f = 1.0 MHz

180

pF

255

pF

60

pF

td(on)

Turn - On Delay Time

tr

Turn - On Rise Time

td(off)

Turn - Off Delay Time

tf

Turn - Off Fall Time

Qg

Total Gate Charge

Qgs

Gate-Source Charge

Qgd

Gate-Drain Charge

VDD = -10 V, ID = -1 A,

VGS = -10 V, RGEN = 50 Ω

VDS = -10 V, ID = -1.1 A,

VGS = -5 V

7

15

ns

17

30

ns

56

90

ns

41

80

ns

3.5

5

nC

1.5

nC

2

nC

NDS356P Rev. E1

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