NDS352AP データシートの表示（PDF） - Fairchild Semiconductor

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NDS352AP

P-Channel Logic Level Enhancement Mode Field Effect Transistor

Fairchild Semiconductor 

Typical Electrical Characteristics (continued)

1.1

1.08

1.06

ID = - 2 5 0 µ A

1.04

1.02

1

0.98

0.96

0.94

-50

-25

0

25

50

75

100 125 150

TJ , JUNCTION TEMPERATURE (°C)

Figure 7. Breakdown Voltage Variation with

Temperature.

4

VGS = 0V

1

0.1

0.01

TJ = 125°C

25°C

-55°C

0.001

0.0001

0

0.2

0.4

0.6

0.8

1

1.2

1.4

-V SD , BODY DIODE FORWARD VOLTAGE (V)

Figure 8. Body Diode Forward Voltage Variation with

Source Current and Temperature.

400

300

200

Ciss

Coss

100

50

30

20

0 .1

f = 1 MHz

VGS = 0 V

Crss

0 .2

0 .5

1

2

5

10

-VDS , DRAIN TO SOURCE VOLTAGE (V)

20 30

Figure 9. Capacitance Characteristics.

10

ID = -0.9A

8

VDS= -5V -10

-15

6

4

2

0

0

1

2

3

4

5

Q , GATE CHARGE (nC)

g

Figure 10. Gate Charge Characteristics.

VIN

VGS

RGEN

G

VDD

RL

D

V OUT

DUT

S

t d(on)

ton

tr

90%

td(off)

toff

tf

90%

VO U T

VIN

10%

10%

50%

10%

90%

50%

PULSE WIDTH

INVERTED

Figure 11. Switching Test Circuit.

Figure 12. Switching Waveforms.

NDS352Ap Rev.C

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