NDS8425 データシートの表示（PDF） - Fairchild Semiconductor

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NDS8425

Single N-Channel Enhancement Mode Field Effect Transistor

Fairchild Semiconductor 

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Symbol Parameter

Conditions

OFF CHARACTERISTICS

BVDSS

IDSS

Drain-Source Breakdown Voltage

Zero Gate Voltage Drain Current

VGS = 0 V, ID = 250 µA

VDS = 16 V, VGS = 0 V

IGSSF

Gate - Body Leakage, Forward

IGSSR

Gate - Body Leakage, Reverse

ON CHARACTERISTICS (Note 2)

VGS(th)

Gate Threshold Voltage

VGS = 8 V, VDS = 0 V

VGS = -8 V, VDS= 0 V

VDS = VGS, ID = 250 µA

RDS(ON)

Static Drain-Source On-Resistance

VGS = 4.5 V, ID = 7.4 A

ID(on)

On-State Drain Current

gFS

Forward Transconductance

DYNAMIC CHARACTERISTICS

Ciss

Input Capacitance

Coss

Output Capacitance

Crss

Reverse Transfer Capacitance

SWITCHING CHARACTERISTICS (Note 2)

tD(on)

Turn - On Delay Time

tr

Turn - On Rise Time

tD(off)

Turn - Off Delay Time

tf

Turn - Off Fall Time

Qg

Total Gate Charge

Qgs

Gate-Source Charge

Qgd

Gate-Drain Charge

VGS = 2.7 V, ID = 7.2 A

VGS = 4.5 V, VDS = 5 V

VDS = 5 V, ID = 7.4 A

VDS = 10 V, VGS = 0 V,

f = 1.0 MHz

VDD = 5 V, ID = 1 A,

VGEN = 4.5 V, RGEN = 6 Ω

VDS = 10 V,

ID = 7.4 A, VGS = 4.5 V

Min Typ Max Units

20

TJ= 55°C

V

1

µA

10

µA

100 nA

-100 nA

0.4 0.6

1

V

TJ= 125°C 0.2 0.35 0.8

0.02 0.025 Ω

TJ= 125°C

0.03 0.045

0.025 0.03

20

A

26

S

1100

pF

580

pF

190

pF

10

18

ns

30

55

ns

70

150

ns

28

50

ns

27

38

nC

1.5

nC

9

nC

NDS8425 Rev. C

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