NDS8425 データシートの表示（PDF） - Fairchild Semiconductor

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NDS8425

Single N-Channel Enhancement Mode Field Effect Transistor

Fairchild Semiconductor 

Typical Electrical Characteristics (continued)

1.12

ID = 250µA

1.08

1.04

1

0.96

0.92

-50 -25

0

25

50

75 100 125 150

TJ , JUNCTION TEMPERATURE (°C)

Figure 7. Breakdown Voltage

Variation with Temperature.

20

10 VGS = 0V

1

0.1

0.01

TJ = 125°C

25°C

-55°C

0.001

0.0001

0

0.3

0.6

0.9

1.2

VSD , BODY DIODE FORWARD VOLTAGE (V)

Figure 8. Body Diode Forward Voltage Variation

with Source Current and

Temperature.

4000

3000

2000

1000

Ciss

Coss

500

300

Crss

f = 1 MHz

VGS = 0 V

100

0.1

0.2

0.5

1

2

5

10

20

VDS, DRAIN TO SOURCE VOLTAGE (V)

Figure 9. Capacitance Characteristics.

5

ID = 7.4A

4

3

VDS = 5V

10

15

2

1

0

0

6

12

18

24

30

Q g, GATE CHARGE (nC)

Figure 10. Gate Charge Characteristics.

VIN

VGS

RGEN

G

VDD

RL

D

VOUT

DUT

S

Figure 11. Switching Test Circuit.

t d(on)

ton

tr

90%

td(off)

toff

tf

90%

VO U T

VIN

10%

10%

50%

10%

90%

INVERTED

50%

PULSE WIDTH

Figure 12. Switching Waveforms.

NDS8425 Rev. C

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