NDT452 データシートの表示（PDF） - Fairchild Semiconductor

部品番号

コンポーネント説明

メーカー

NDT452

P-Channel Enhancement Mode Field Effect Transistor

Fairchild Semiconductor 

Electrical Characteristics (TA = 25°C unless otherwise noted)

Symbol Parameter

Conditions

Min Typ Max Units

DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS

IS

Maximum Continuous Drain-Source Diode Forward Current

-2.5

A

VSD

Drain-Source Diode Forward Voltage

VGS = 0 V, IS = -2.5 A (Note 2)

-0.85 -1.2

V

trr

Reverse Recovery Time

VGS = 0 V, IF = -2.5 A, dIF/dt = 100 A/µs

100

ns

Notes:

1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by

design while RθCA is determined by the user's board design.

( ) = = = ( ) × PD t

TJ−TA

R θJA(t )

TJ−TA

RθJC+RθCA(t )

I

2

D

t

RDS(ON ) TJ

Typical RθJA using the board layouts shown below on 4.5"x5" FR-4 PCB in a still air environment:

a. 42oC/W when mounted on a 1 in2 pad of 2oz copper.

b. 95oC/W when mounted on a 0.066 in2 pad of 2oz copper.

c. 110oC/W when mounted on a 0.0123 in2 pad of 2oz copper.

1a

1b

1c

Scale 1 : 1 on letter size paper

2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%.

NDT452AP Rev. B1

Share Link: