NDT452 データシートの表示（PDF） - Fairchild Semiconductor

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NDT452

P-Channel Enhancement Mode Field Effect Transistor

Fairchild Semiconductor 

Typical Electrical Characteristics

1.1

1.08

1.06

I D = -250µA

1.04

1.02

1

0.98

0.96

0.94

-50

-25

0

25

50

75

100 125 150

TJ , JUNCTION TEMPERATURE (°C)

Figure 7. Breakdown Voltage Variation with

Temperature.

20

10

VGS = 0V

5

1

TJ = 125°C

25°C

0.1

-55°C

0.01

0.001

0

0.4

0.8

1.2

1.6

2

-VSD , BODY DIODE FORWARD VOLTAGE (V)

Figure 8. Body Diode Forward Voltage Variation

with Current and Temperature.

2000

1000

500

C iss

C oss

300

200

f = 1 MHz

VGS = 0V

C rss

100

0.1

0.2

0.5

1

2

5

10

30

-V DS , DRAIN TO SOURCE VOLTAGE (V)

Figure 9. Capacitance Characteristics.

10

ID = -5.0A

8

V = -5V

DS

-10V

-20V

6

4

2

0

0

5

10

15

20

25

Q g , GATE CHARGE (nC)

Figure 10. Gate Charge Characteristics.

VIN

VG S

RGEN

G

-VD D

RL

D

VOUT

DUT

S

Figure 11. Switching Test Circuit.

t d(on)

ton

tr

90%

td(off)

toff

tf

90%

VO U T

VIN

10%

10%

50%

10%

90%

50%

PULSE WIDTH

INVERTED

Figure 12. Switching Waveforms.

NDT452AP Rev. B1

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