NDT452P データシートの表示（PDF） - Fairchild Semiconductor

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NDT452P

P-Channel Enhancement Mode Field Effect Transistor

Fairchild Semiconductor 

September 1996

NDT452P

P-Channel Enhancement Mode Field Effect Transistor

General Description

Features

Power SOT P-Channel enhancement mode power field

effect transistors are produced using Fairchild's

proprietary, high cell density, DMOS technology. This very

high density process is especially tailored to minimize

on-state resistance and provide superior switching

performance. These devices are particularly suited for low

voltage applications such as notebook computer power

management and DC motor control.

-3A, -30V. RDS(ON) = 0.18Ω @ VGS = -10V.

High density cell design for extremely low RDS(ON).

High power and current handling capability in a widely used

surface mount package.

____________________________________________________________________________________________________________

D

D

G

D

S

G

S

Absolute Maximum Ratings

Symbol Parameter

TA = 25°C unless otherwise noted

VDSS

Drain-Source Voltage

VGSS

Gate-Source Voltage

ID

Drain Current - Continuous

- Pulsed

(Note 1a)

PD

Maximum Power Dissipation

(Note 1a)

(Note 1b)

(Note 1c)

TJ,TSTG Operating and Storage Temperature Range

THERMAL CHARACTERISTICS

RθJA

Thermal Resistance, Junction-to-Ambient

RθJC

Thermal Resistance, Junction-to-Case

* Order option J23Z for cropped center drain lead.

(Note 1a)

(Note 1)

© 1997 Fairchild Semiconductor Corporation

NDT452P

-30

±20

±3

±20

3

1.3

1.1

-65 to 150

42

12

Units

V

V

A

W

°C

°C/W

°C/W

NDT452P Rev. C3

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