NDT452P データシートの表示（PDF） - Fairchild Semiconductor
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NDT452P Datasheet PDF : 10 Pages
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Typical Electrical Characteristics (continued)
1.1
1.05
ID = -250µA
1
0.95
0.9
0.85
-50
-25
0
25
50
75
100 125 150
TJ , JUNCTION TEMPERATURE (°C)
Figure 7. Breakdown Voltage Variation with
Temperature.
10
5 V GS = 0V
2
1
0.5
0.2
0.1
0.05
TJ = 125°C
25°C
-55°C
0.02
0.01
-0.4
-0.8
-1.2
-1.6
-2
VSD , BODY DIODE FORWARD VOLTAGE (V)
Figure 8. Body Diode Forward Voltage Variation
with Current and Temperature.
1000
700
500
300
200
f = 1 MHz
VGS = 0V
C iss
C oss
C rss
10
ID = -3A
VDS = -10V
8
6
4
2
100
0
0.1
0.2
0.5
1
2
5
10
20
0
-VDS , DRAIN TO SOURCE VOLTAGE (V)
4
8
12
16
Q g , GATE CHARGE (nC)
Figure 9. Capacitance Characteristics.
Figure 10. Gate Charge Characteristics.
V IN
VG S
RGEN
G
-VD D
RL
D
V OUT
DUT
S
Figure 11. Switching Test Circuit.
t d(on)
ton
tr
90%
td(off)
toff
tf
90%
VO U T
VIN
10%
10%
50%
10%
90%
50%
PULSE WIDTH
INVERTED
Figure 12. Switching Waveforms.
NDT452P Rev. C3
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