HUF76113DK8 データシートの表示（PDF） - Fairchild Semiconductor

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HUF76113DK8

6A, 30V, 0.032 Ohm, Dual N-Channel, Logic Level UltraFET Power MOSFET

Fairchild Semiconductor 

HUF76113DK8

Electrical Specifications TA = 25oC, Unless Otherwise Specified

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

SWITCHING SPECIFICATIONS (VGS = 10V)

Turn-On Time

Turn-On Delay Time

Rise Time

tON

VDD = 15V, ID ≅ 6A, RL = 2.5Ω, VGS =

-

10V,

td(ON)

RGS = 18Ω

-

tr

(Figure 16)

-

Turn-Off Delay Time

td(OFF)

-

Fall Time

tf

-

Turn-Off Time

tOFF

-

GATE CHARGE SPECIFICATIONS

Total Gate Charge

Gate Charge at 5V

Threshold Gate Charge

Gate to Source Gate Charge

Gate to Drain “Miller” Charge

CAPACITANCE SPECIFICATIONS

Qg(TOT) VGS = 0V to 10V VDD = 15V, ID ≅ 1.8A,

-

Qg(5)

VGS = 0V to 5V

RL = 8.3Ω

Ig(REF) = 1.0mA

-

Qg(TH) VGS = 0V to 1V (Figure 14)

-

Qgs

-

Qgd

-

Input Capacitance

Output Capacitance

CISS

VDS = 25V, VGS = 0V,

-

f = 1MHz

COSS (Figure 13)

-

Reverse Transfer Capacitance

CRSS

-

Source to Drain Diode Specifications

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

Source to Drain Diode Voltage

VSD

ISD = 6A

-

ISD = 1.8A

Reverse Recovery Time

trr

ISD = 1.8A, dISD/dt = 100A/µs

-

Reverse Recovered Charge

QRR

ISD = 1.8A, dISD/dt = 100A/µs

-

Typical Performance Curves

TYP

-

6.5

33

50

40

-

16.0

8.4

0.55

1.50

3.90

605

275

40

TYP

-

-

-

MAX UNITS

60

ns

-

ns

-

ns

-

ns

-

ns

135

ns

19.2

nC

10.2

nC

0.66

nC

-

nC

-

nC

-

pF

-

pF

-

pF

MAX

1.25

1.00

40

42

UNITS

V

V

ns

nC

1.2

1.0

0.8

0.6

0.4

0.2

0

0

25

50

75

100

125

150

TA, AMBIENT TEMPERATURE (oC)

FIGURE 1. NORMALIZED POWER DISSIPATION vs AMBIENT

TEMPERATURE

7

6

VGS = 10V, RθJA = 50oC/W

5

4

3

2

VGS = 4.5V, RθJA = 228oC/W

1

0

25

50

75

100

125

150

TA, AMBIENT TEMPERATURE (oC)

FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs

AMBIENT TEMPERATURE

©2003 Fairchild Semiconductor Corporation

HUF76113DK8 Rev. B1

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