HMBT3904 データシートの表示（PDF） - Hi-Sincerity Microelectronics
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HMBT3904 Datasheet PDF : 3 Pages
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HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6814
Issued Date : 1993.06.23
Revised Date : 2002.10.25
Page No. : 1/3
HMBT3904
NPN EPITAXIAL PLANAR TRANSISTOR
Description
The HMBT3904 is designed for general purpose switching amplifier
applications.
Absolute Maximum Ratings
SOT-23
• Maximum Temperatures
Storage Temperature ........................................................................................... -65 ~ +150 °C
Junction Temperature.................................................................................................... +150 °C
• Maximum Power Dissipation
Total Power Dissipation (Ta=25°C) ............................................................................... 225 mW
• Maximum Voltages and Currents (Ta=25°C)
VCBO Collector to Base Voltage ......................................................................................... 60 V
VCEO Collector to Emitter Voltage...................................................................................... 40 V
VEBO Emitter to Base Voltage.............................................................................................. 6 V
IC Collector Current........................................................................................................ 200 mA
Characteristics (Ta=25°C)
Symbol
Min.
Typ.
BVCBO
60
-
BVCEO
40
-
BVEBO
6
-
ICEX
-
-
*VCE(sat)1
-
-
*VCE(sat)2
-
-
*VBE(sat)1 650
-
*VBE(sat)2
-
-
*hFE1
40
-
*hFE2
70
-
*hFE3
100
-
*hFE4
60
-
*hFE5
30
-
fT
300
-
Cob
-
-
Max.
-
-
-
50
200
300
850
950
-
-
300
-
-
-
4
Unit
Test Conditions
V
V
V
nA
mV
mV
mV
mV
MHz
pF
IC=10uA
IC=1mA
IC=10uA
VCE=30V, VBE=-3V
IC=10mA, IB=1mA
IC=50mA, IB=5mA
IC=10mA, IB=1mA
IC=50mA, IB=5mA
VCE=1V, IC=0.1mA
VCE=1V, IC=1mA
VCE=1V, IC=10mA
VCE=1V, IC=50mA
VCE=1V, IC=100mA
VCE=20V, IC=10mA, f=100MHz
VCB=5V, f=1MHz
*Pulse Test: Pulse Width ≤380us, Duty Cycle≤2%
HMBT3904
HSMC Product Specification
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