NLAS323 データシートの表示（PDF） - ON Semiconductor
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NLAS323 Datasheet PDF : 10 Pages
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NLAS323
ADDITIONAL APPLICATION CHARACTERISTICS (Voltages Referenced to GND Unless Noted)
Symbol
Parameter
VCC
Condition
V
BW
Maximum On−Channel −3dB Bandwidth VIS = 0 dBm
3.0
or Minimum Frequency Response
VIS centered between VCC and GND
4.5
(Figures 6 and 14)
5.5
VONL Maximum Feedthrough On Loss
VIS = 0 dBm @ 10 kHz
3.0
VIS centered between VCC and GND
4.5
(Figure 6)
5.5
VISO Off−Channel Isolation
f = 100 kHz; VIS = 1.0 V RMS
3.0
VIS centered between VCC and GND
4.5
(Figures 6 and 15)
5.5
Q
Charge Injection
VIS = VCC to GND, FIS = 20 kHz
3.0
Enable Input to Common I/O
tr = tf = 3.0 ns
5.5
RIS = 0 W, CL = 1000 pF
Q = CL * DVOUT
(Figures 6 and 16)
THD
Total Harmonic Distortion
THD + Noise
FIS = 20 Hz to 1 MHz, RL = Rgen = 600 W, CL = 50 pF 3.3
VIS = 3.0 VPP sine wave 5.5
VIS = 5.0 VPP sine wave
(Figure 17)
Limit
25°C
190
200
220
−2
−2
−2
−93
1.5
3.0
0.3
0.15
Unit
MHz
dB
dB
pC
%
1.00E+05
1.00E+04
1.00E+03
1.00E+02
1.00E+01
1.00E+00
ICOM(ON)
1.00E−01
1.00E−02
1.00E−03
1.00E−04
ICOM(OFF)
1.00E−05
1.00E−06
INO(OFF)
1.00E−07
−55 −35 −15 5 25 45 65 85
TEMPERATURE (°C)
105 125 145
Figure 3. Switch Leakage vs. Temperature
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