NLAS324(2003) データシートの表示（PDF） - ON Semiconductor

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NLAS324
(Rev.:2003)

Dual SPST Analog Switch, Low Voltage, Single Supply

ON Semiconductor 

NLAS324

ADDITIONAL APPLICATION CHARACTERISTICS (Voltages Referenced to GND Unless Noted)

Symbol

Parameter

VCC

Condition

V

BW

Maximum On-Channel -3dB Bandwidth VIS = 0 dBm

3.0

or Minimum Frequency Response

VIS centered between VCC and GND

4.5

(Figures 6 and 14)

5.5

VONL Maximum Feedthrough On Loss

VIS = 0 dBm @ 10 kHz

3.0

VIS centered between VCC and GND

4.5

(Figure 6)

5.5

VISO Off-Channel Isolation

f = 100 kHz; VIS = 1 V RMS

3.0

VIS centered between VCC and GND

4.5

(Figures 6 and 15)

5.5

Q

Charge Injection

VIS = VCC to GND, FIS = 20 kHz

3.0

Enable Input to Common I/O

tr = tf = 3 ns

5.5

RIS = 0 W, CL = 1000 pF

Q = CL * ∆VOUT

(Figures 7 and 16)

THD

Total Harmonic Distortion

THD + Noise

FIS = 20 Hz to 1 MHz, RL = Rgen = 600 W, CL = 50 pF 3.3

VIS = 3.0 VPP sine wave 5.5

VIS = 5.0 VPP sine wave

(Figure 17)

Limit

25°C

190

200

220

-2

-2

-2

-93

1.5

3.0

0.3

0.15

Unit

MHz

dB

dB

pC

%

1.00E+05

1.00E+04

1.00E+03

1.00E+02

1.00E+01

1.00E+00

1.00E-01

1.00E-02

1.00E-03

1.00E-04

1.00E-05

1.00E-06

1.00E-07

-55

ICOM(ON)

ICOM(OFF)

INO(OFF)

-35 -15

5 25 45 65 85

TEMPERATURE (°C)

105 125 145

Figure 3. Switch Leakage vs. Temperature

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