NLAS324 データシートの表示（PDF） - ON Semiconductor
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NLAS324 Datasheet PDF : 10 Pages
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NLAS324
ADDITIONAL APPLICATION CHARACTERISTICS (Voltages Referenced to GND Unless Noted)
Symbol
BW
Parameter
Maximum On−Channel −3dB Bandwidth
or Minimum Frequency Response
Condition
VIS = 0 dBm
VIS centered between VCC and GND
(Figures 6 and 14)
VCC Limit
V
25°C Unit
3.0 190 MHz
4.5 200
5.5 220
VONL Maximum Feedthrough On Loss
VIS = 0 dBm @ 10 kHz
VIS centered between VCC and GND (Figure 6)
3.0
−2
dB
4.5
−2
5.5
−2
VISO Off−Channel Isolation
f = 100 kHz; VIS = 1 V RMS
VIS centered between VCC and GND
(Figures 6 and 15)
3.0
−93
dB
4.5
5.5
Q
Charge Injection
Enable Input to Common I/O
THD
Total Harmonic Distortion
THD + Noise
VIS = VCC to GND, FIS = 20 kHz
tr = tf = 3 ns
RIS = 0 W, CL = 1000 pF
Q = CL * DVOUT (Figures 7 and 16)
3.0
1.5
pC
5.5
3.0
FIS = 20 Hz to 1 MHz, RL = Rgen = 600 W, CL = 50 pF 3.3
0.3
%
VIS = 3.0 VPP sine wave
5.5 0.15
VIS = 5.0 VPP sine wave (Figure 17)
1.00E+05
1.00E+04
1.00E+03
1.00E+02
1.00E+01
1.00E+00
ICOM(ON)
1.00E−01
1.00E−02
1.00E−03
1.00E−04
ICOM(OFF)
1.00E−05
1.00E−06
INO(OFF)
1.00E−07
−55 −35 −15 5 25 45 65 85
TEMPERATURE (°C)
105 125 145
Figure 3. Switch Leakage vs. Temperature
DUT
VCC
NO
COM
0.1 mF
300
W
Input
VOUT
35 pF
VCC
Input
0V
Output
VOL
Figure 4. tON/tOFF
50%
VOH
90%
tON
50%
90%
tOFF
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