NLAS325(2002) データシートの表示（PDF） - ON Semiconductor
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NLAS325 Datasheet PDF : 12 Pages
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NLAS325
DC CHARACTERISTICS – Digital Section (Voltages Referenced to GND)
Symbol
VIH
Parameter
Minimum High–Level Input
Voltage, Select Inputs
VIL
Maximum Low–Level Input
Voltage, Select Inputs
IIN
Maximum Input Leakage
Current, Select Inputs
ICC
Maximum Quiescent Supply
Current
Condition
VIN = 5.5 V or GND
VCC
2.0
2.5
3.0
4.5
5.5
2.0
2.5
3.0
4.5
5.5
0 V to 5.5 V
Select and VIS = VCC or GND
5.5
Guaranteed Limit
*55_C to 25_C t85_C t125_C Unit
1.5
1.5
1.5
V
1.9
1.9
1.9
2.1
2.1
2.1
3.15
3.15
3.15
3.85
3.85
3.85
0.5
0.5
0.5
V
0.6
0.6
0.6
0.9
0.9
0.9
1.35
1.35
1.35
1.65
1.65
1.65
$0.2
$2.0 $2.0 mA
4.0
4.0
8.0
mA
DC ELECTRICAL CHARACTERISTICS – Analog Section
Symbol
RON
Parameter
Maximum “ON” Resistance
(Figures 16 – 22)
Condition
VIN = VIL or VIH
VIS = GND to VCC
IINI v 10.0 mA
RFLAT (ON)
INC(OFF)
INO(OFF)
ICOM(ON)
ON Resistance Flatness
(Figures 16 – 22)
NO or NC Off Leakage
Current (Figure 8)
COM ON Leakage Current
(Figure 8)
VIN = VIL or VIH
IINI v 10.0 mA
VIS = 1 V, 2 V, 3.5 V
VIN = VIL or VIH
VNO or VNC = 1.0 VCOM 4.5 V
VIN = VIL or VIH
VNO 1.0 V or 4.5 V with VNC
floating or
VNO 1.0 V or 4.5 V with VNO
floating
VCOM = 1.0 V or 4.5 V
Guaranteed Limit
VCC *55_C to 25_C t85_C t125_C Unit
2.5
85
95
105
W
3.0
45
50
55
4.5
30
35
40
5.5
25
30
35
4.5
4
4
5
W
5.5
1
5.5
1
10
100
nA
10
100
nA
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