NLAS325 データシートの表示（PDF） - ON Semiconductor
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NLAS325 Datasheet PDF : 10 Pages
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NLAS325
DC CHARACTERISTICS − Digital Section (Voltages Referenced to GND)
Symbol
VIH
Parameter
Minimum High−Level Input
Voltage, Select Inputs
VIL
Maximum Low−Level Input
Voltage, Select Inputs
IIN
Maximum Input Leakage
Current, Select Inputs
ICC
Maximum Quiescent Supply
Current
Condition
VIN = 5.5 V or GND
VCC
2.0
2.5
3.0
4.5
5.5
2.0
2.5
3.0
4.5
5.5
0 V to 5.5 V
Select and VIS = VCC or GND
5.5
Guaranteed Limit
*555C to 255C t855C t1255C Unit
1.5
1.5
1.5
V
1.9
1.9
1.9
2.1
2.1
2.1
3.15
3.15
3.15
3.85
3.85
3.85
0.5
0.5
0.5
V
0.6
0.6
0.6
0.9
0.9
0.9
1.35
1.35
1.35
1.65
1.65
1.65
$0.2
$2.0 $2.0 mA
4.0
4.0
8.0
mA
DC ELECTRICAL CHARACTERISTICS − Analog Section
Guaranteed Limit
Symbol
RON
Parameter
Maximum “ON” Resistance
(Figures 16 − 22)
Condition
VIN = VIL or VIH
VIS = GND to VCC
IINI v 10 mA
VCC *555C to 255C t855C t1255C Unit
2.5
85
3.0
45
4.5
30
5.5
25
95
105
W
50
55
35
40
30
35
RFLAT(ON) ON Resistance Flatness
(Figures 16 − 22)
VIN = VIL or VIH
IINI v 10 mA
VIS = 1.0 V, 2.0 V, 3.5 V
4.5
4.0
INC(OFF)
INO(OFF)
NO or NC Off Leakage
Current (Figure 8)
VIN = VIL or VIH
VNO or VNC = 1.0 VCOM 4.5 V
5.5
1.0
ICOM(ON) COM ON Leakage Current VIN = VIL or VIH
5.5
1.0
(Figure 8)
VNO 1.0 V or 4.5 V with VNC floating or
VNO 1.0 V or 4.5 V with VNO floating
VCOM = 1.0 V or 4.5 V
4.0
5.0
W
10
100
nA
10
100
nA
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