NLU1G86 データシートの表示（PDF） - ON Semiconductor
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NLU1G86 Datasheet PDF : 8 Pages
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NLU1G86
DC ELECTRICAL CHARACTERISTICS
Symbol
VIH
VIL
VOH
VOL
IIN
ICC
Parameter
Low-Level
Input Voltage
Low-Level
Input Voltage
High-Level
Output Voltage
Low-Level
Output Voltage
Input Leakage
Current
Quiescent
Supply Current
Conditions
VIN = VIH or VIL
IOH = -50 mA
VIN = VIH or VIL
IOH = -4 mA
IOH = -8 mA
VIN = VIH or VIL
IOL = 50 mA
VIN = VIH or VIL
IOL = 4 mA
IOL = 8 mA
0 v VIN v 5.5 V
0 v VIN v VCC
VCC
(V)
1.65
2.3 to
5.5
1.65
2.3 to
5.5
2.0
3.0
4.5
3.0
4.5
2.0
3.0
4.5
3.0
4.5
0 to
5.5
5.5
TA = 25 5C
Min Typ Max
0.75 x
VCC
0.70 x
VCC
0.25 x
VCC
0.30 x
VCC
1.9 2.0
2.9 3.0
4.4 4.5
2.58
3.94
0
0.1
0
0.1
0
0.1
0.36
0.36
±0.1
1.0
TA = +855C
Min
Max
0.75 x
VCC
0.70 x
VCC
0.25 x
VCC
0.30 x
VCC
1.9
2.9
4.4
2.48
3.80
0.1
0.1
0.1
0.44
0.44
±1.0
10
TA = -555C to
+1255C
Min
Max Unit
V
0.25 x V
VCC
0.30 x
VCC
1.9
V
2.9
4.4
2.34
3.66
0.1
V
0.1
0.1
0.52
0.52
±1.0 mA
40
mA
AC ELECTRICAL CHARACTERISTICS (Input tr = tf = 3.0 nS)
Symbol
tPLH,
tPHL
Parameter
Propagation
Delay,
Input A or B to
Output Y
CIN
Input
Capacitance
VCC
(V)
3.0 to
3.6
4.5 to
5.5
Test Condition
CL = 15 pF
CL = 50 pF
CL = 15 pF
CL = 50 pF
TA = 25 5C
Min Typ Max
4.4
11
5.7 14.5
3.5 6.8
4.2 8.8
5.5
10
TA = +855C
Min
Max
13
16.5
8.0
10
10
TA = -555C to
+1255C
Min
Max Unit
15.5
ns
19.5
10
12
10
pF
CPD
Power
5.0
10
pF
Dissipation
Capacitance
(Note 6)
6. CPD is defined as the value of the internal equivalent capacitance which is calculated from the dynamic operating current consumption without
load. Average operating current can be obtained by the equation ICC(OPR) = CPD • VCC • fin + ICC. CPD is used to determine the no-load
dynamic power consumption: PD = CPD • VCC2 • fin + ICC • VCC.
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