NSB8ATHE3_B/P データシートの表示（PDF） - Vishay Semiconductors
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NSB8ATHE3_B/P Datasheet PDF : 5 Pages
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www.vishay.com
NS8xT, NSF8xT, NSB8xT
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS SYMBOL NS8AT NS8BT NS8DT NS8GT NS8JT NS8KT NS8MT UNIT
Maximum instantaneous
forward voltage
8.0 A TJ = 25 °C
VF (1)
1.1
V
Maximum DC reverse
current at rated DC blocking
voltage
TJ = 25 °C
IR
TJ = 100 °C
Typical junction capacitance 4.0 V, 1 MHz
CJ
Note
(1) Pulse test: 300 μs pulse width, 1 % duty cycle
10
μA
100
55
pF
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
NSXT
Typical thermal resistance from junction to case
RJC
3.0
NSFXT
5.0
NSBXT
3.0
UNIT
°C/W
ORDERING INFORMATION (Example)
PACKAGE
PREFERRED P/N
UNIT WEIGHT (g) PACKAGE CODE
TO-220AC
NS8JT-E3/45
1.80
45
ITO-220AC
NSF8JT-E3/45
1.95
45
TO-263AB
NSB8JT-E3/45
1.77
45
TO-263AB
NSB8JT-E3/81
1.77
81
ITO-220AC
NSF8JTHE3_B/P (1)
1.95
P
TO-263AB
NSB8JTHE3_B/P (1)
1.77
P
TO-263AB
NSB8JTHE3_B/I (1)
1.77
I
Note
(1) AEC-Q101 qualified, available in ITO-220AC and TO-263AB package
BASE QUANTITY
50/tube
50/tube
50/tube
800/reel
50/tube
50/tube
800/reel
DELIVERY MODE
Tube
Tube
Tube
Tape and reel
Tube
Tube
Tape and reel
Revision: 12-Sep-2018
2
Document Number: 88690
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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