NTD4806N-1G データシートの表示（PDF） - ON Semiconductor

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NTD4806N-1G

Power MOSFET 30 V, 76 A, Single N--Channel, DPAK/IPAK

ON Semiconductor 

NTD4806N

ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)

Parameter

Symbol

Test Condition

Min

Typ

Max

Unit

DRAIN--SOURCE DIODE CHARACTERISTICS

Forward Diode Voltage

Reverse Recovery Time

Charge Time

Discharge Time

VSD

VGS = 0 V,

TJ = 25°C

IS = 30 A

TJ = 125°C

tRR

ta

VGS = 0 V, dIs/dt= 100 A/ms,

tb

IS = 30 A

0.9

1.2

V

0.8

26

ns

13

13

Reverse Recovery Time

PACKAGE PARASITIC VALUES

QRR

16

nC

Source Inductance

Drain Inductance, DPAK

Drain Inductance, IPAK

Gate Inductance

Gate Resistance

LS

LD

LD

TA = 25°C

LG

RG

2.49

nH

0.0164

1.88

3.46

1.0

Ω

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