NTD4806N-1G データシートの表示（PDF） - ON Semiconductor
部品番号
コンポーネント説明
メーカー
NTD4806N-1G Datasheet PDF : 8 Pages
| |||
NTD4806N
TYPICAL PERFORMANCE CURVES
4000
VDS = 0 V VGS = 0 V
3000 Ciss
TJ = 25°C
Ciss
2000
Crss
1000
Coss
0
Crss
10
5
0
5
10
15
20
25
VGS
VDS
GATE--TO--SOURCE OR DRAIN--TO--SOURCE VOLTAGE (VOLTS)
Figure 7. Capacitance Variation
8
6
QT
Q1
Q2
4
VGS
2
ID = 30 A
VGS = 4.5 V
0
TJ = 25°C
0
5
10
15
20
QG, TOTAL GATE CHARGE (nC)
Figure 8. Gate--To--Source and Drain--To--Source
Voltage vs. Total Charge
1000
VDD = 15 V
ID = 30 A
VGS = 11.5 V
100
tr
td(off)
10
td(on)
tf
1
1
10
100
RG, GATE RESISTANCE (OHMS)
Figure 9. Resistive Switching Time
Variation vs. Gate Resistance
30
VGS = 0 V
25 TJ = 25°C
20
15
10
5
0
0.5
0.6
0.7
0.8
0.9
1.0
VSD, SOURCE--TO--DRAIN VOLTAGE (VOLTS)
Figure 10. Diode Forward Voltage vs. Current
1000
100
10 ms
100 ms
10
1
0.1
0.1
VGS = 20 V
SINGLE PULSE
TC = 25°C
1 ms
10 ms
dc
RDS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
1
10
100
VDS, DRAIN--TO--SOURCE VOLTAGE (VOLTS)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
250
ID = 21 A
200
150
100
50
0
25
50
75
100
125
150 175
TJ, JUNCTION TEMPERATURE (°C)
Figure 12. Maximum Avalanche Energy vs.
Starting Junction Temperature
http://onsemi.com
5
Share Link: 