NTE124 データシートの表示（PDF） - NTE Electronics

部品番号

コンポーネント説明

メーカー

NTE124

Silicon NPN Transistor High Voltage Power Output

NTE Electronics 

Electrical Charactersitics: (TC = +25°C unless otherwise specified)

Parameter

Symbol

Test Conditions

OFF Characteristics

Collector–Emitter Sustaining Voltage

Collector–Emitter Cutoff Current

Collector–Base Cutoff Current

Collector Cutoff Current

Emitter–Base Cutoff Current

ON Characteristics (Note 1)

VCEO(sus) IC = 5mA, IB = 0, Note 1

ICEO VCE = 200V, IB = 0

ICBO VCB = 325V, IE = 0

ICEV VCE = 300V, VEB(off) = 1.5V

VCE = 200V, VEB(off) = 1.5V,

TC = +100°C

IEBO VEB = 6V

DC Current Gain

Collector–Emitter Saturation Voltage

Base–Emitter “ON” Voltage

Small–Signal Characteristics

hFE

VCE(sat)

VBE(on)

IC = 50mA, VCE = 10V

IC = 100mA, VCE = 10V

IC = 250mA, VCE = 10V

IC = 250mA, IB = 25mA

IC = 100mA, VCE = 10V

Current–Gain – Bandwidth Product

fT IC = 100mA, VCE = 10V,

f = 10MHz, Note 2

Output Capacitance

Small–Signal Current Gain

Cob VCB = 100V, IE = 0, f = 100kHz

hfe IC = 100mA, VCE = 20V, f = 1kHz

Min Typ Max Unit

300 – – V

– – 0.25 mA

– – 0.1 mA

– – 0.5 mA

– – 1.0 mA

– – 0.1 mA

30 – –

40 – 200

25 – –

– – 2.5 V

– – 1.0 V

10 – – MHz

– – 20 pF

35 – –

Note 1. Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2%.

Note 2. fT = |hfe| D frequency

.062 (1.57)

.485 (12.3)

Dia

.295 (7.5)

.031 (0.78) Dia

.360 (9.14)

Min

.960 (24.3)

Base

.580 (14.7)

.147 (3.75) Dia

(2 Places)

.145 (3.7) R Max

.200

(5.08)

Collector/Case

Emitter

Share Link: