NTE154 データシートの表示（PDF） - NTE Electronics

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NTE154

Silicon NPN Transistor High Voltage Video Output

NTE Electronics 

Electrical Characteristics: (TA = +25°C unless otherwise specified)

Parameter

Symbol

Test Conditions

Min Typ Max Unit

Collector Base Breakdown Voltage

Emitter Base Breakdown Voltage

Collector Cutoff Current

V(BR)CBO

V(BR)EBO

ICBO

IC = 100µA, IE = 0

IE = 100µA, IC = 0

IE = 0, VCB = 200V

IE = 0, VCB = 200V, TA = +125°C

300 –

–V

7

–

–V

– 1.0 100 nA

– 0.2 5.0 µA

Emitter Cutoff Current

DC Current Gain

IEBO IC = 0, VEB = 6V

hFE IC = 1mA, VCE = 20V

IC = 10mA, VCE = 20V, Note 5

IC = 30mA, VCE = 20V, Note 5

– 1.0 100 nA

20 50 –

40 100 –

40 100 –

Collector Emitter Sustaining Voltage

Base Emitter Saturating Voltage

Collector Emitter Saturating Voltage

High Frequency Current Gain

VCEO(sus) IC = 5mA, IB = 0, Note 2, Note 5

300 –

–V

VBE(sat) IC = 20mA, IB = 2mA, Note 5

– 0.74 0.85 V

VCE(sat) IC = 20mA, IB = 2mA, Note 5

– 0.35 1.0 V

hfe IC = 15mA, VCE = 150V, f = 20MHz 2.5 4.0 –

IC = 3mA, VCE = 270V, f = 20MHz 2.0 2.5 –

Collector Base Capacitance

IC = 30mA, VCE = 30V, f = 20MHz, 2.0 4.0 –

RL = 9kΩ

Ccb IE = 0, VCB = 20V

– 2.5 3.0 pF

Emitter Base Capacitance

Ceb IC = 0, VEB = 500mV

– 45 70 pF

Note 2. This rating refers to a high current point where collector to emitter voltage is lowest.

Note 5. Pulse Conditions: Length = 300µs, Duty Cycle = 1%.

.260

(6.6)

Max

.370 (9.39) Dia Max

.355 (9.03) Dia Max

.500

(12.7)

Min

Emitter

.018 (0.45)

Base

Collector/Case

45°

.031 (.793)

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