NTE2306 データシートの表示（PDF） - NTE Electronics

部品番号

コンポーネント説明

メーカー

NTE2306

Silicon Complementary Transistors High Voltage Power Amplifier

NTE Electronics 

NTE2305 (NPN) & NTE2306 (PNP)

Silicon Complementary Transistors

High Voltage Power Amplifier

Description:

The NTE2305 (NPN) and NTE2306 (PNP) are silicon complementary transistors in a TO218 type

package designed for use in high power audio amplifier applications and high voltage switching regu-

lator circuits.

Features:

D High Collector–Emitter Sustaining Voltage: VCEO(sus) = 160V

D High DC Current Gain: hFE = 35 Typ @ IC = 8A

D Low Collector–Emitter Saturation Voltage: VCE(sat) = 2V Max @ IC = 8A

Absolute Maximum Ratings:

Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 160V

Collector–Base Voltage, VCB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 160V

Emitter–Base Voltage, VEB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 70V

Collector Current, IC

Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16A

Peak (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20A

Continuous Base Current, IB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5A

Power Dissipation (TC = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 125W

Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +150°C

Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +150°C

Thermal Resistance, Junction–to–Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1°C/W

Note 1. Pulse Test: Pulse Width ≤ 5ms, Duty Cycle ≥ 10%.

Electrical Charactertistics: (TC = +25°C unless otherwise specified)

Parameter

Symbol

Test Conditions

Min Typ Max Unit

OFF Characteristics

Collector–Emitter Sustaining Voltage VCEO(sus) IC = 200mA, IB = 0, Note 2

160 – – V

Collector–Emitter Cutoff Current

ICEX VCE = 160V, VEB(off) = 1.5V

– – 0.1 mA

VCE = 160V, VEB9off) = 1.5V, TC = +150°C –

– 5.0 mA

ICEO VCE = 80V, IB = 0

– – 750 µA

Emitter–Base Cutoff Current

IEBO VBE = 7V, IC = 0

– – 1.0 mA

Collector–Base Cutoff Current

ICBO VCB = 160V, IE = 0

– – 750 µA

Note 2. Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≥ 2%.

Share Link: