NTE24 データシートの表示（PDF） - NTE Electronics

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NTE24

Silicon Complementary Transistors General Purpose Amplifier, Switch

NTE Electronics 

NTE24 (NPN) & NTE25 (PNP)

Silicon Complementary Transistors

General Purpose Amplifier, Switch

Description:

The NTE24 (NPN) and NTE25 (PNP) are complementary silicon transistors in a TO237 type package

designed for general purpose medium power amplifier and switching circuits that require collector cur-

rents to 1A.

Features:

D High Collector–Emitter Breakdown Voltage: VCEO = 80V

D Exceptional Power Dissipation Capability

Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)

Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V

Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80V

Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V

Collector Current, IC

Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1A

Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2A

Power Dissipation, PD

TA = +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 850mW

TC = +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2W

Junction Temperature, TJ(max) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C

Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C

Thermal Resistance, Junction–to–Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50°C/W

Thermal Resistance, Junction–to–Ambient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 167°C/W

Electrical Characteristics: (TA = +25°C unless otherwise specified)

Parameter

Symbol

Test Conditions

Collector–Emitter Breakdown Voltage V(BR)CEO IC = 10mA, IB = 0

Collector Cutoff Current

Emitter Cutoff Current

DC Current Gain

ICBO

IEBO

hFE

VCB = 100V, IE = 0

VEB = 5V, IC = 0

VCE = 2V, IC = 50mA

VCE = 2V, IC = 250mA

VCE = 2V, IC = 500mA

Min Typ Max Unit

80 –

–

V

–

– 0.1 µA

–

– 100 nA

40 –

–

40 –

–

25 –

–

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