NTE2594 データシートの表示（PDF） - NTE Electronics

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NTE2594

Silicon NPN Transistor High Voltage, High Current Switch

NTE Electronics 

NTE2594

Silicon NPN Transistor

High Voltage, High Current Switch

Features:

D High Breakdown Voltage, High Reliability

D Fast Switching Speed

D Wide ASO

Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)

Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 800V

Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500V

Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7V

Collector Current, IC

Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15A

Pulsed (PW ≤ 300µs, Duty Cycle ≤ 10%) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25A

Base Current, IB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4A

Collector Dissipation, PC

TA = +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3W

TC = +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55W

Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C

Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C

Electrical Characteristics: (TA = +25°C unless otherwise specified)

Parameter

Symbol

Test Conditions

Collector Cutoff Current

Emitter Cutoff Current

DC Current Gain

Gain Bandwidth Product

Output Capacitance

Collector–Emitter Saturation Voltage

Base–Emitter Saturation Voltage

Collector–Base Breakdown Voltage

Collector–Emitter Breakdown Voltage

Emitter–Base Breakdown Voltage

ICBO VCB = 500V, IE = 0

IEBO VEB = 5V, IC = 0

hFE VCE = 5V, IC = 1.2A

VCE = 5V, IC = 6A

fT

VCE = 10V, IC = 1.2A

Cob VCB = 10V, f = 1MHz

VCE(sat) IC = 6A, IB = 1.2A

VBE(sat) IC = 6A, IB = 1.2A

V(BR)CBO IC = 1mA, IE = 0

V(BR)CEO IC = 5mA, RBE = ∞

V(BR)EBO IE = 1mA, IC = 0

Min Typ Max Unit

– – 10 µA

– – 10 µA

15 – 50

8––

– 18 – MHz

– 160 – pF

– – 1.0 V

– – 1.5 V

800 – – V

500 – – V

7––V

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